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[en] What is the point of developing new high-brightness light sources if beamline optics won't be available to realize the goals of nano-focusing and coherence preservation? That was one of the central questions raised during a workshop at the 2007 Advanced Light Source Users Meeting. Titled, 'Advanced X-Ray Optics Metrology for Nano-focusing and Coherence Preservation', the workshop was organized by Kenneth Goldberg and Valeriy Yashchuk (both of Lawrence Berkeley National Laboratory, LBNL), and it brought together industry representatives and researchers from Japan, Europe, and the US to discuss the state of the art and to outline the optics requirements of new light sources. Many of the presentations are viewable on the workshop website http://goldberg.lbl.gov/MetrologyWorkshop07/. Many speakers shared the same view of one of the most significant challenges facing the development of new high-brightness third and fourth generation x-ray, soft x-ray, and EUV light sources: these sources place extremely high demands on the surface quality of beamline optics. In many cases, the 1-2-nm surface error specs that define the outer bounds of 'diffraction-limited' quality are beyond the reach of leading facilities and optics vendors. To focus light to 50-nm focal spots, or smaller, from reflective optics and to preserve the high coherent flux that new sources make possible, the optical surface quality and alignment tolerances must be measured in nano-meters and nano-radians. Without a significant, well-supported research effort, including the development of new metrology techniques for use both on and off the beamline, these goals will likely not be met. The scant attention this issue has garnered is evident in the stretched budgets and limited manpower currently dedicated to metrology. With many of the world's leading groups represented at the workshop, it became clear that Japan and Europe are several steps ahead of the US in this critical area. But the situation isn't all dire: several leading groups are blazing a trail forward, and the recognition of this issue is increasing. The workshop featured eleven invited talks whose presenters came from Japan, Europe, and the US

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[en] Defect free masks remain one of the most significant challenges facing the commercialization of extreme ultraviolet (EUV) lithography. Progress on this front requires high-performance wavelength-specific metrology of EUV masks, including high-resolution and aerial-image microscopy performed near the 13.5 nm wavelength. Arguably the most cost-effective and rapid path to proliferating this capability is through the development of Fresnel zoneplate-based microscopes. Given the relative obscurity of such systems, however, modeling tools are not necessarily optimized to deal with them and their imaging properties are poorly understood. Here we present a modeling methodology to analyze zoneplate microscopes based on commercially available optical modeling software and use the technique to investigate the imaging performance of an off-axis EUV microscope design. The modeling predicts that superior performance can be achieved by tilting the zoneplate, making it perpendicular to the chief ray at the center of the field, while designing the zoneplate to explicitly work in that tilted plane. Although the examples presented here are in the realm of EUV mask inspection, the methods described and analysis results are broadly applicable to zoneplate microscopes in general, including full-field soft-x-ray microscopes routinely used in the synchrotron community.

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[en] Extreme-ultraviolet (EUV) lithography remains a leading contender for use in the mass production of nanoelectronics at the 32 nm node. Great progress has been made in all areas of EUV lithography, including the crucial issue of fabrication of diffraction-limited optics. To gain an accurate understanding of the projection optic wavefront error in a completed lithography tool requires lithography-based aberration measurements; however, making such measurements in EUV systems can be challenging. We describe the quantitative lithographic measurement of spherical aberration in a 0.3 numerical aperture. EUV microfield optic. The measurement method is based on use of the unique properties of a programmable coherence illuminator. The results show the optic to have 1 nm rms spherical error, whereas interferometric measurements performed during the alignment of the optic indicated a spherical error of less than 0.1 nm rms