[en] The optical properties of ordered arrays of silicon nanopillars (Si NPs) were investigated. Electron Beam Lithography (EBL) followed by Inductively Coupled Plasma Reactive Ion Etching (ICP-RIE) was used for Si NPs fabrication. Si NPs were chemically and electrically passivated through the deposition of TiONx nanolayer. The silicon nanopillars were characterized by using scanned electron microscopy (SEM), high resolution transmission electron microscopy (HRTEM). We demonstrate that a various colors can be obtained by exploiting the resonant light scattering properties of individual Si NP. In addition the low temperature photoluminescence from Si NPs was investigated. The peak photoluminescence energy was observed at 0.83 μm and 1.14 μm. Raman scattering enhancement was found too

[en] The criteria for merging shock waves formed by optical breakdowns on the surface of solids have been investigated. Targets made of different materials were successively irradiated by two CO₂-laser pulses with energies up to 200 J and a duration of ∼1 μs. It is shown that the criteria under consideration can be applied to different targets and irradiation regimes and make it possible to calculate the parameters of repetitively pulsed laser radiation that are necessary to generate low-frequency sound and ultrasound in air.

[en] The electrical and optical properties of silicon nanopillars (Si NPs) are studied. Electron-beam lithography and reactive ion etching are used for the formation of ordered Si-NP arrays. The Si NPs with a diameter from 60 to 340 nm and a height from 218 to 685 nm are formed. The Si NPs are coated with a TiON"x layer with a thickness of 8 nm for chemical and electrical passivation of the surface. Scanning electron microscopy and atomic-force microscopy are used to characterize the obtained structures. The Si-NP arrays acquire various colors when exposed to “bright-field” illumination. The spectra of reflection from the Si-NP arrays in the wavelength range 500–1150 nm are obtained