[en] Variation of chemical composition of GaAs, InSb and Si monocrystal substrate surface layers at cleaning under UV-radiation effect in oxygen is studied. Layer thicknesses are estimated and element relations in layers are calculated using gualitative method for analysis of Auger spectroscopy data on lamellar structures. UV-ozone cleaning is shown to enable to reduce oxygen content at semiconductor surface by 2-4 times. 7 refs.; 2 tabs

[en] Proceeding the Liouville-von Neumann equation, the kinetic equation for the photons interacting with nonrelativistic electrons in a constant electric field has been obtained using the method of the non-equilibrium statistical operator. The collision integral is nonzero due to the influence of the field on the interaction of photons with electrons. Absorption and radiation probabilities of the photons depend on the photon frequency and the field strength projection on the photon momentum direction and the power and oscillating manner. Oscillations are bounded with the energy-time uncertainty relation. The contribution of this effect into the photon spectrum relatively radiation at electron scattering on the phonons and ionized impurities is calculated for n-GaAs. The parameter region is found, where the influence of this effect on the spectrum may be essential

[en] The spectral characteristics of the multiperiod semiconductor periodic structures, containing electrically controlled layers, are theoretically studied. The possibility is shown of realizing the photon forbidden zone practically at any section of the analyzed IR-range and electrical control of its position. The radiation absorption on the free charge carriers is accounted for. It is shown that the carriers concentration distribution inside the layer does not essentially effect the output electrodynamic characteristics in comparison with the model of the uniform concentration inside the layer

[en] A study was made on processes, taking place in evaporator and on sublayer surface, when using boron oxide as a source of boron for doping of epitaxial silicon layers in molecular beam epitaxy. It was shown that publication data on evaporation from effusion cell of molecules of HBO₃ acid or B₂O₃ oxide were faulty, because, as we revealed, boric acid dehydrated completely at working temperatures, and pressure of boron(3) oxide vapors was extremely low. Mechanism of boron oxide evaporation in the form of BO was suggested. Process of boron oxide reduction on the surface of epitaxially growing silicon film was explained. 5 refs.; 3 figs