No abstract available

[en] Measurements of the electron energy distributions and the plasma parameters were carried out by a Langmuir probe in the electron beam excited (EBE) plasma which was utilized for SNMS as SNART (Sputtered Neutral Analysis - Riken Type). It was clarified that the EBE plasma has a broad high energy component of the electron beam. It was also found that there is a potential difference of 60-110 V between the floating potential of the insulator target and the space potential, which is sufficient for sputtering. The insulator analysis by SNART could be obtained very quickly due to the high ion current density and the existence of high energy electron component in the EBE plasma. (author)

[en] A new electron beam excited plasma (EBEP) etching system has been developed. This EBEP system can efficiently generate a high density and uniform plasma by introducing a high current low-energy electron beam into an etching gas chamber. The uniformity of the Cl plasma density is within ±2.5% over an 8 in. wafer and the uniformity of the plasma and floating potential across the wafer is within ±2 V. This ultrahigh uniformity of the potentials overcomes the problem of the breakdown of thin gate insulators during etching that originate from the nonuniformity of the potential at the substrate. The selectivity of etching obtained is 40:1 for poly-Si/resist and more than 100:1 for poly-Si/SiO₂. The etch rate is 3600 A/min. 4 refs., 9 figs

[en] The procedure for the fabrication of self-supporting isotopically enriched ¹¹B targets for the application to nuclear scattering measurements using an electron-beam-excited plasma (EBEP) method was described. A boron target layer of thickness 100±10 μg/cm² was obtained. The thickness and uniformity of the prepared ¹¹B film were determined by measuring the energy loss of alpha particles across the target area. The purity of the target was examined, and it was found that the investigated boron film contained about 10% impurities