[en] This study examined the effects of the composition and microstructure on the electric resistivity of Ge-doped Sb phase change thin films grown by cyclic plasma enhanced chemical vapor deposition. Ge and Sb layers were deposited sequentially to form either a Ge_xSb_y mixture or Ge/Sb nanolaminated films. While the resistivity of the nanolaminated films was higher, the Ge_xSb_y mixture showed a lower resistivity than the pure Sb film. This can be explained by the increase in carrier density of the alloy, as confirmed by first-principles calculations. An abrupt change in resistance accompanying a phase change was observed at ∼210 deg. C.