[en] Half-metals with high Curie temperature are ideal candidates for applications in spin-based electronics—an emerging technology utilizing a spin degree of freedom in electronic devices. Many half-metallic materials have been predicted theoretically, and some have been confirmed experimentally. At the same time, in thin-film geometry the electronic structure of these materials may change due to the potential presence of surface/interface states. This could limit practical applications of these materials in nano-size devices, since typically these states result in reduced spin-polarization. Here, from first principles we study a full Heusler compound, Co₂CrAl in thin film geometry. This material has been studied extensively, and it has been reported that it exhibits half-metallic properties in the bulk. We show contrary to the earlier reports that this material retains 100% spin polarization in CrAl-terminated thin film geometry (Co-termination results in destroyed half-metallicity). Moreover, we confirm that under biaxial strain Co₂CrAl retains half-metallicity for a practically feasible range of considered pressure, i.e. in principle it may stay half-metallic if used in thin-film heterostructures, where lattice mismatch is a common scenario. The magnetic alignment of Co₂CrAl is confirmed to be ferromagnetic, with the non-integer total magnetic moment of Co-terminated cell, and the integer total magnetic moment of CrAl-terminated cell, consistent with their corresponding non-half-metallic and half-metallic electronic structures. If confirmed experimentally, these results may have an important impact in spin-based electronics. (paper)

[en] Magnetocrystalline anisotropy (MCA) is one of the key parameters investigated in spin-based electronics (spintronics), e.g. for memory applications. Here, we employ first-principles calculations to study MCA in thin film full Heusler alloy Co₂CrAl. This material was studied in the past, and has been reported to exhibit half-metallic electronic structure in bulk geometry. In our recent work, we showed that it retains a 100% spin-polarization in thin-film geometry, at CrAl atomic surface termination. Here, we show that the same termination results in a perpendicular magnetic anisotropy, while Co surface termination not only destroys the half-metallicity, but also results in in-plane magnetization orientation. In addition, for films thicker than around 20 nm the contribution from magnetic shape anisotropy may become decisive, resulting in in-plane magnetization orientation. To the best of our knowledge, this is one of the first reports of half-metallic thin-film surfaces with perpendicular magnetic anisotropy. This result may be of interest for potential nano-device applications, and may stimulate a further experimental study of this and similar materials. (paper)

[en] A high degree of spin polarization in electron transport is one of the most sought-after properties of a material which can be used in spintronics—an emerging technology utilizing a spin degree of freedom in electronic devices. An ideal candidate to exhibit highly spin-polarized current would be a room temperature half-metal, a material which behaves as an insulator for one spin channel and as a conductor for the other spin channel. In this paper, we explore a semi-Heusler compound, IrMnSb, which has been reported to exhibit pressure induced half-metallic transition. We confirm that the bulk IrMnSb is a spin-polarized metal, with dominant contribution to electronic states at the Fermi energy from majority-spin electrons. Application of a uniform pressure shifts the Fermi level into the minority-spin energy gap, thus demonstrating pressure induced half-metallic transition. This behavior is explained by the reduction of the exchange splitting of the spin bands consistent with the Stoner model for itinerant magnetism. We find that the half-metallic transition is suppressed when instead of uniform pressure the bulk IrMnSb is exposed to biaxial strain. This suppression of half-metallicity is driven by the epitaxial strain induced tetragonal distortion, which lifts the degeneracy of the Mn 3 d t_2g and e_g orbitals and reduces the minority-spin band gap under compressive strain, thus preventing half-metallic transition. Our calculations also indicate that in thin film geometry, surface states emerge in the minority-spin band gap, which has detrimental for practical applications impact on the spin polarization of IrMnSb. (paper)