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Met. Trans; v. 5(5); p. 1183-1188
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Olive, J.R.; Hofmeister, W.H.; Bayuzick, R.J.; Carro, G.; McHugh, J.P.; Hopkins, R.H.; Vlasse, M.
Containerless processing: Techniques and applications1993
Containerless processing: Techniques and applications1993
AbstractAbstract
[en] Containerless processing of YBa2Cu3O7-δ was performed using drop tube and aero-acoustic levitation techniques. In drop tube experiments, two solidification microstructures developed which corresponded to the degree of melting. In aero-acoustic levitation experiments, three solidification microstructures developed. One microstructure was the result of incomplete homogenization of the melt. The second was due to slight undercooling into the Y2O3 + liquid region of the phase diagram upon which primary Y2O3 dendrites formed. The third was due to much deeper undercooling. In this case, the primary solidification structure consisted of dendrites of tetragonal 1:2:3 and some other interdendritic phase. Subsequent to solidification processing, these samples were annealed to single phase 1:2:3 with orthorhombic symmetry. SQUID magnetometer measurements indicated a sharp superconducting transition at approximately 85 K. Magnetic Jc values, calculated using the Bean critical state model, indicated that the deeply undercooled and annealed samples had critical current densities on the order of 104 Acm-2
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Hofmeister, W.H. (ed.) (Vanderbilt Univ., Nashville, TN (United States)); Schiffman, R. (ed.) (R.S. Research, Inc., Riverwoods, IL (United States)); 152 p; ISBN 0-87339-202-7; ; 1993; p. 111-121; Minerals, Metals and Materials Society; Warrendale, PA (United States); 122. annual meeting of the Minerals, Metals and Materials Society (TMS); Denver, CO (United States); 21-25 Feb 1993; Minerals, Metals and Materials Society, 420 Commonwealth Drive, Warrendale, PA 15086 (United States)
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Conference; Numerical Data
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[en] Silicon carbide has long been recognized as a favorable material for applications at high temperatures and in radiation environments, but device development has been hindered by lack of adequate substrates. This paper reviews the current Westinghouse material development effort aimed at the growth of high quality 6H boules and describes 6H SiC devices fabricated on Westinghouse substrates. MESFET and MOSFET transistors were made in a microwave power design layout. The MESFET and MOSFET transistors were subjected to a total gamma irradiation of 1 megaGray (100 megarad) and exhibited threshold voltage shifts of about 0.4 and 1.2 Volts respectively with little change in bulk material parameters
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10. symposium on space nuclear power and propulsion; Albuquerque, NM (United States); 10-14 Jan 1993; CONF-930103--
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