No abstract available

[en] In order to increase the deposition rate in magnetron sputtering, end plates were attached to both ends of cylindrical target. A current density of 0.1 A/cm² was obtained with relatively low target voltage from 300 to 800 V. Deposition rates of Al and Cu were measured as functions of target voltage and current. From a discrepancy between measured and calculated values based on sputtering yield data, it is considered that sputtered Al atoms were ionized in a high density argon plasma and that the target was bombarded not only with argon ions but also with aluminum ions. Ionized Al atoms are estimated as about 18% of all the total ion current. Sputtering of Al and Cu in Kr and He were also examined. The same experiment was performed with another configuration of the electrode in which permanent magnet cores were placed inside the cylindrical target so that a spatially alternating magnetic field was applied along the axis. Discharge and sputtering characteristics were similar to the first one, although the shape of plasma and electron current to the substrate were much different

[en] A compact ECR Ion source (CECRIS) has been developed for application to ion beam sputtering with argon ions of high energy and to surface treatment of thin films with oxygen ions of low energy. Large improvement in extraction yields could be achieved by employing 3 extraction grids to focus argon ion beam on a target, and a cylindrical drift tube to transfer low energy oxygen ions. Argon ion current densities higher than 1mA/cm² of the acceleration voltage 1kV have been extracted through the grids, and Oxygen in current densities higher than 0.4mA/cm² of the acceleration voltage 100V have been extracted through the multiaperture grids and the drift tube of 580mm in length. (author)

[en] Findings of planar and single photon emission CT (SPECT) using Ga-67 and T1-201 were compared with pathologic findings after thoracotomy in 21 patients with proved primary lung cancer. The sensitivity of primary lesion accumulation was 47% with Ga-67 SPECT, and 100% with T1-201. For detection of hilar nodal involvement, T1-201 SPECT showed a sensitivity and a specificity of 100%. In mediastinal staging, T1-201 SPECT had 100% sensitivity and 80% specificity. These values were higher than those for Ga-67. For evaluation of the primary lesion and lymph node metastases, T1-201 SPECT proved superior to T1-201 planar, Ga-67 planar, and Ga-67 SPECT

[en] Fundamental characteristics were studied with a high rate coaxial cylindrical magnetron sputtering system. Two types of copper targets were used in which target current density was obtained up to 60 mA/cm² at the target voltages from 300 to 800 V. Observed deposition rates were lower than those of the predicted values calculated from the sputtering yield data. By use of a probe placed just behind the target, ion energies at the target were measured by a retarding field method. Positive ions impinging on a substrate were observed with a quadrupole mass spectrometer. The densities of excited Cu and A atoms in the discharge space were confirmed from the intensity of emission spectra. From these experimental results, it is concluded that a large number of sputtered copper atoms are ionized in the discharge space and returned to the target. (Auth.)

No abstract available

[en] The multi-pixel photon counter (MPPC) is a solid-state photon counting device consisting of a Geiger-mode APD and a quenching resistor. Through-silicon via technology (TSV) allows for the production of a discrete array version of the MPPC, creating a detector with the advantages of a larger active area and less dead space in its overall packaging when compared to other package types commonly used to produce MPPCs. Eliminating the need for a wire-bonding pad allows individual MPPCs to be tiled with minimum dead-space between individual detectors to form a four-sided buttable array. Selecting MPPCs that behave and perform very similarly to each other, especially when an operating voltage is applied, minimizes variation in performance between each channel and enhances channel uniformity. The output of discrete arrays of MPPCs can be easily readout with ASICs (application specific integrated circuits) due to their excellent channel uniformity characteristics, with minimum adjustment required by the ASIC. -- Author-Highlights: • TSV-MPPC and assembly technology are developed. • TSV-MPPC array is tiled in 4-sided buttable and has large and dense active area. • The output pulse of MPPC may have sharp rising edge by virtue of TSV. • The uniformity of the array can be maximized by neat inspection technology

[en] The kinetics of ferrite transformation in a Fe-0.10mass%C-2.94mass%Mn alloy in a strong magnetic field of 8 T were studied with regard to alloying element-partitioned and partitionless growth. According to the theory of diffusion-controlled growth, the slow Mn diffusion dictates partitioned growth that occurs at a low undercooling, whereas partitionless growth at a larger undercooling is rate-controlled by fast carbon diffusion. The alloy was austenitized and isothermally reacted at temperatures that encompass the two growth modes. The nucleation and growth rates of ferrite increased at all temperatures in the magnetic field, whereas the amount of increase was somewhat greater at lower temperatures. In the region of slow growth, besides its sluggish diffusion Mn possibly destabilizes the ferrite phase due to the influence on the magnetic moment and the Curie temperature of bcc Fe solid solution, and partially offsets the accelerating effect of transformation. The temperature of transition from the slow to the fast growth is predicted to increase, due to the shift in the ferrite/austenite phase boundaries in the presence of magnetic field.