[en] This report describes how heat pipes can be used for cooling modern electronic equipment, with numerous advantages over air-cooled systems. A brief review of heat-pipe properties is given, with a detailed description of a functioning prototype. This is a single-width CAMAC unit containing high-density electronic circuits cooled by three heat pipes, and allowing a dissipation of over 120 W instead of the normal maximum of 20 W. (orig.)

[en] A silicon microstrip detector was manufactured using the surface barrier technique. It has 100 strips at 200 μm pitch and it is 400 μm thick. To each strip a fast current sensitive preamplifier is connected so that minimum ionizing particles can be detected on single strips. The signals have a duration of 40 ns and are processed using standard equipment. A description is given of the results which were obtained in two high energy particle beams at CERN. (orig.)

[en] We describe a silicon strip detector, measuring position with capacitative charge division read-out. It has a resolution determined by a strip pitch of 40 μm. The application and ultimate resolution of the method for minimum ionizing particles and α's are discussed. (orig.)

[en] This paper reports on capacitively coupled silicon μ strip detectors exposed to radiation from electrons of energy of up to 2.2 MeV and their parameters measured. The increase in the leakage current per unit volume and radiation dose is 0.02 nA/cm³rad for a total dose of 0.83 Mrad. An increase of the depletion layer capacitance and the interstrip capacitance was measured after a dose of about 190 krad. The polysilicon lines resistance decreased by about 6% at 120 krad. No change was measured for the coupling capacitance at the same dose

[en] In this paper we report on the development of a silicon microstrip detector with integrated coupling capacitors and polysilicon biasing resistors. These new detectors show the same performance as standard detectors made at our laboratory with regard to leakage current and spatial resolution. Leakage currents as low as 200 pA/strip at 120 volts and a spatial resolution as good as 3.5 μm has been achieved. (author)

[en] Si strip detectors with integrated coupling capacitors between diode and metallization and with separate bias resistors for each strip have been exposed to ionising radiation. Results from measurements of detector response before and after irradiation are presented

[en] We have demonstrated the use of capacitative charge division with 40 μm pitch strips on a 350 μm thick silicon surface barrier detector. With this detector we have achieved a resolution of 12 μm with α-particles. For minimum ionizing particles this technique is calculated to give sigma approx. equal to 6 μm resolution with readout every 180 μm. (orig.)

[en] This paper reports on capacitively coupled Si strip detectors with readout on both the p-side and n-side that have been developed. A scheme to obtain ohmic separation on the n-side by field depletion via a suitable potential on the readout strips has been introduced. Detailed tests in a high energy beam have been performed to measure the spatial resolution on the n-side for track angles between 0 degrees and 60 degrees w.r.t. the n⁺-strips. Results are compared with model calculations

[en] Capacitively coupled Si strip detectors with readout on both the p-side and the n-side have been developed. A novel scheme to separate strips ohmically on the n-side by means of field depeletion via a suitable potential applied to the readout strips has been successfully demonstrated. Results on the spatial resolution of these detectors for both sides measured in a high energy beam are presented. The spatial resolution of the n-side has been measured at different incident angles of the beam tracks with respect to a vertical plane through the n⁺ strips at 0deg, 20deg and 40deg. (orig.)

[en] A 256-strip silicon detector with 25 μm strip pitch, connected to two 128-channel NMOS VLSI chips (Microplex), has been tested using straight-through tracks from a ruthenium beta source. The readout channels have a pitch of 47.5 μm. A single multiplexed output provides voltages proportional to the integrated charge from each strip. The most probable signal height from the beta traversals is approximately 14 times the rms noise in any single channel. (orig.)