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Applied Physics Letters; v. 21(4); p. 137-139
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15. Japan conference on radioisotopes; Tokyo (Japan); 26-27 Nov 1981; Published in summary form only.
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Journal Article
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Conference
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Proceedings of the Japan Conference on Radioisotopes; ISSN 0546-0247; ; (no.15); p. 282-286
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AbstractAbstract
[en] Molybdenum films deposited on Si substrates have been implanted with 130 keV Si ions to different doses at various substrate temperatures. The ion induced reaction in the Mo-Si structure has been investigated by Rutherford backscattering techniques. The logarithm plots of the thickness of the silicide layers formed as a function of reciprocal implant temperature can be fitted to an exponential function with an activation energy of 0.09 eV. The backscattering data also show that the thickness of the silicide layers increases with the square root of implant dose. It is revealed that the redistribution of As atoms previously implanted in Si substrate occurs during the ion-induced silicide formation even though the reaction proceeds at low temperatures, e.g., 4000C. (Auth.)
Source
Furukawa, Seijiro (ed.); 377 p; ISBN 90-277-1939-X; ; 1985; p. 287-295; D. Reidel; Dordrecht (Netherlands); US-Japan seminar on solid phase epitaxy and interface kinetics; Oiso (Japan); 20-24 Jun 1983
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[en] Arsenic ions were implanted in a strained-Si/SiGe/Si hetero-structure to fabricate an n+ layer in the substrate. The disordering of the substrate caused by ion implantation and the reordering during post-implant rapid thermal annealing (RTA) were analyzed by Rutherford backscattering and channeling (RBS) measurements. It was shown that the major part of implantation-induced defects was eliminated during RTA for 10 s above 900 deg. C. Electrical and atomic-concentration profiles for As-implanted layers were examined by differential Hall-effect and secondary ion mass spectrometric (SIMS) measurements, respectively. A 25-nm thick, n+ layer with carrier concentrations in a range of 5.2x1019 to 1.7x1020 cm-3 was formed in the strained Si layer after RTA at 1000 deg. C without the deterioration in the abruptness of the Si/SiGe interface. It was also revealed that the electrons in the strained Si layer had a higher mobility than the electrons in bulk Si by a factor of around 1.2 in a carrier concentration range of mid-1019 to -1020 cm-3
Source
ISTDM 2003: 1. international SiGe technology and device meeting - From materials and process technology to device and circuit technology; Nagoya (Japan); 15-17 Jan 2003; S016943320301064X; Copyright (c) 2003 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA)
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AbstractAbstract
[en] The present report describes a method allowing quantitation of antiarsonate IgE antibodies and the estimation of the fraction of such antibodies which expresses the recurring CRIsub(A) idiotypic determinant. This method permits an analysis of the regulation of this idiotype within IgE-type antibodies
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Journal Article
Journal
Annales d'Immunologie (Paris); ISSN 0300-4910; ; v. 135(1); p. 39-44
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Tohyama, S.; Matsuzaki, M.; Inada, T.
Report of Research Center of Ion Beam Technology, Hosei University, supplement 3, March 19841984
Report of Research Center of Ion Beam Technology, Hosei University, supplement 3, March 19841984
AbstractAbstract
No abstract available
Source
Hosei Univ., Tokyo (Japan); 182 p; Mar 1984; p. 43-46; Hosei Univ; Tokyo (Japan); 2. symposium on ion beam technology, Hosei University; Tokyo (Japan); 2-3 Dec 1983; ion beam analysis; Tokyo (Japan); 2-3 Dec 1983; Published in summary form only.
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AbstractAbstract
[en] Zinc implantation has been carried out in n-type GaP at an energy of 100 keV and at doses of 1013-1016 cm-2. Hall-effect and sheet-resistivity measurements combined with an anodic oxide growth and layer stripping technique have been employed to determine doping profiles in Zn-implanted layers. The effects of implant dose and temperature, annealing time, and encapsulating material on doping profiles formed have been investigated. It has been shown that various doping profiles are formed depending upon implant dose and annealing time, due to the redistribution of implanted Zn which is influenced by these implantation parameters. Very shallow p-type layers (approx. equal to1000 Angstroem thick) have been formed by a 2 min annealing at 9000C. Photodetectors with the maximum quantum efficiency of 44% at a wavelength of 440 nm have been fabricated by using the shallow p-type layers formed in n-type GaP substrate. (orig.)
Source
2. international conference on ion beam modification of materials; Albany, NY, USA; 14 - 18 Jul 1980
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Journal Article
Literature Type
Conference; Numerical Data
Journal
Nuclear Instruments and Methods; ISSN 0029-554X; ; v. 182/183(pt.2); p. 647-654
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AbstractAbstract
No abstract available
Source
Brief note.
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Journal Article
Journal
Electronics Letters; ISSN 0013-5194; ; v. 16(2); p. 54-55
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Hayakawa, Y.; Inada, T.; Harasawa, S.; Hatanaka, H.
Proceedings of the first international symposium on neutron capture therapy1982
Proceedings of the first international symposium on neutron capture therapy1982
AbstractAbstract
[en] The absorbed doses in the tumor and in the brain of a patient treated by boron neutron capture therapy are determined by the neutron fluence and the concentration of boron-10 in the tumor and in the blood. In the past the authors used a gold foil activation method to determine the neutron fluence. This method has the drawback that the exact neutron fluence can be determined only after the irradiation is over. They developed in 1977 a system for simultaneous monitorig of thermal neutron flux during irradiation of the patient. Although they reported this in 1978, further advances have been made. They also report briefly on the measurement of boron-10 concentration in tissues. The neutron intensity in the brain is influenced by many factors, such as the distance between the patient's heat and the irradiation port, the size of the irradiation field, and the depth of the tumor. They developed a small detector for simultaneous monitoring which can be implanted into the brain of the patient
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Secondary Subject
Source
Fairchild, R.G.; Brownell, G.L. (eds.); Brookhaven National Lab., Upton, NY (USA); p. 77-87; 1982; p. 77-87; Symposium on neutron capture therapy; Boston, MA (USA); 12-14 Oct 1983; Available from NTIS, PC A17/MF A01; 1 as DE84017247
Record Type
Report
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Conference
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ALKALI METAL COMPOUNDS, BARYONS, BODY, BORON ISOTOPES, CENTRAL NERVOUS SYSTEM, DISEASES, ELEMENTARY PARTICLES, FERMIONS, FLUORIDES, FLUORINE COMPOUNDS, HADRONS, HALIDES, HALOGEN COMPOUNDS, ISOTOPES, LIGHT NUCLEI, LITHIUM COMPOUNDS, LITHIUM HALIDES, LITHIUM ISOTOPES, MEASURING INSTRUMENTS, MEDICINE, MONITORING, NERVOUS SYSTEM, NEUTRON THERAPY, NEUTRONS, NUCLEI, NUCLEONS, ODD-ODD NUCLEI, ORGANS, RADIATION DETECTORS, RADIATION FLUX, RADIOTHERAPY, SEMICONDUCTOR DETECTORS, STABLE ISOTOPES, THERAPY
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AbstractAbstract
No abstract available
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Source
International Atomic Energy Agency, Vienna (Austria); Panel proceedings series; p. 272; ISBN 92-0-111476-1; ; 1976; IAEA; Vienna; Educational seminar on the uses of californium-252 in teaching and research; Karlsruhe, Germany, F.R; 14 - 18 Apr 1975; IAEA-SR--3/15; Abstract only.
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Book
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Conference
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