[en] Arsenic ions were implanted in a strained-Si/SiGe/Si hetero-structure to fabricate an n⁺ layer in the substrate. The disordering of the substrate caused by ion implantation and the reordering during post-implant rapid thermal annealing (RTA) were analyzed by Rutherford backscattering and channeling (RBS) measurements. It was shown that the major part of implantation-induced defects was eliminated during RTA for 10 s above 900 deg. C. Electrical and atomic-concentration profiles for As-implanted layers were examined by differential Hall-effect and secondary ion mass spectrometric (SIMS) measurements, respectively. A 25-nm thick, n⁺ layer with carrier concentrations in a range of 5.2x10¹⁹ to 1.7x10²⁰ cm^-3 was formed in the strained Si layer after RTA at 1000 deg. C without the deterioration in the abruptness of the Si/SiGe interface. It was also revealed that the electrons in the strained Si layer had a higher mobility than the electrons in bulk Si by a factor of around 1.2 in a carrier concentration range of mid-10¹⁹ to -10²⁰ cm^-3

[en] Physical and electrical measurements have been made to examine fundamental properties of strained-Si/Si_0.7Ge_0.3/Si hetero-structures implanted with 50keV BF₂⁺ ions. Although an implantation-induced amorphous layer is regrown during rapid thermal annealing, secondary defects are introduced if annealing is done above 900 deg. C. It is revealed that hole mobility is enhanced in strained-Si layers with hole concentrations between 5.0x10¹⁹ and 1.2x10²⁰cm^-3. The Si/SiGe interface is broadened during implantation and the ion-mixing rate is estimated to be about 0.3atom/ion. Suppression of the redistribution of Ge into the Si layer is a crucial issue to achieve enhanced mobility in ion-implanted, strained-Si grown on SiGe