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[en] Phase relations in the La-Ni-O system versus temperature and oxygen partial pressure have been investigated as well as thermodynamic characteristics of La and Ni complex oxides formed in the system. Phases of the investigated samples were identified by the X-ray diffraction technique. To determine the thermodynamic characteristics of intermediate . phases in the investigated system, a method of measuring the EMF of oxygen concentration chains with a solid electrolyte (ZrO2 doped with Y2O3) has been used. The obtained temperature dependences (T approximately 800-1200 deg C) of the chain EMF are treated by the least square fit. Values of the dissociation pressure for the investigated oxides and changes in the Gibbs free energies of the potential-forming reactions of concentration chains are determined. Changes in standard Gibbs potentials of the La4Ni3O10 and La2NiO4 formation from the elements are as follows: ΔGsub(f)sup(0)(Lasub(4)Nisub(3)Osub(10)), J/mol=-4379760-35.23 T lo. T + 962.05xT(+-1000) (1203 < T, K <-- 1473), ΔGsub(p)sup(0)(Lasub(2)NiOsub(4)), J/mol=-2029310-17.61 T lg T + 413.89 T(+-1000) (1073 <= T, K <1473). A projection fragment of the system phase diagram is plotted
Journal
Zhurnal Fizicheskoj Khimii; ISSN 0044-4537; 
; v. 57(4); p. 859-863
; v. 57(4); p. 859-863
[en] The mechanism of strengthening of niobium, vanadium and tantalum with nitrogen and oxygen in a quantity of 0.02-0.03 at % and 0.01-0.02 at. %, respectively is studied. It is established that the intensity of strengthening of solid solutions increases in the Nb-O, Ta-O, Ta-N, Nb-N, V-O series. It is shown that the effective interaction energy for interstitial atoms and dislocations is defined by the zise effect for all the alloys under consideration except Nb-N. It is noted that it is impossible to describe the mechanism of concentration strengthening with oxygen and nitrogen using the concept about pinning of dislocations on single interstitial atoms
Journal
Izvestiya Akademii Nauk SSSR, Metally; ISSN 0568-5303; ; (no.3); p. 201-206
; (no.3); p. 201-206
[en] Using the Sim Windows program package, we have numerically calculated the photocurrents in the space-charge region of thin metal-silicon structures with quantum wells (QWs) as well as their dependences on the geometrical size and the number of the QWs, and on the doping level. A possibility of creating the photosensitive structures on the basis of the layers of porous silicon with various degree of porosity has been analyzed
Journal
Ukrayins'kij Fyizichnij Zhurnal (Kiev); ISSN 0372-400X; ; v. 49(no.9); p. 917-920
; v. 49(no.9); p. 917-920
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