[en] Aluminum oxide was deposited on arsenic doped silicon, using atomic layer deposition (ALD) with either a silicon oxide or a silicon nitride interface. The physical properties of these films were investigated by elastic-recoil-detection, X-ray-photoelectron-spectroscopy and transmission electron microscopy. Special focus was given to contamination of the film and the interface, crystallization and temperature effect on diffusion. The films remained stoichiometric and did not have Al-Al clusters, even post annealing steps. Evidence of diffusion of silicon and arsenic into the dielectric and of aluminum from the film was found. Carbon and hydrogen were seen in the film and at the interface as well, whereas hydrogen diffused out of the film to some extent due to anneal. Carbon content in the layer was reduced by using O₃ as oxidant. Grain size of crystalline Al₂O₃ films was in the order of film thickness

[en] The quantitative analysis of light elements in ultra thin films being thinner than 10 nm is still a nontrivial task. This paper will summarise the prospects of high resolution elastic recoil detection (ERD) using a Q3D magnetic spectrograph. It has been shown that subnanometer resolution can be achieved in ultra thin films and even monolayer resolution is possible close to the surface. ERD has best quantification possibilities compared to any other method. Sensitivity is sufficient to analyse main elements and impurities as e.g. being necessary for the characterisation of microelectronic materials. In addition, high resolution channeling ERD can be performed in order to get information on lattice location of light elements in crystalline ultra thin layers. The potential of high resolution ERD will be demonstrated by several applications where it is the most valuable tool for elemental profiling