[en] It was recently reported that a kind of graphene line defect can be fabricated in a controllable experimental way. In the present work we theoretically investigate the band structure and the electronic transport properties of a graphene superlattice formed by embedding periodically line defects in the graphene lattice. Based on the calculated results, we suggest that such a superlattice can be used as a quantum wire array which can carry much larger current than a single graphene nanoribbon. A remarkable advantage of this superlattice over other quantum wires is that the electronic transport in it is insensitive to scattering effects except that the scattering potential range is smaller than the graphene lattice constant. Moreover, we find that the anisotropy of the Dirac cone presented in this superlattice has a nontrivial influence on the universal minimal conductivity and the sub-Poissonian shot noise of graphene.

[en] Our theoretical investigation indicates that an applied magnetic field can open a gap between the conduction and valence bands of a nodal line semimetal (NLSM), though it is a kind of gapless material in the absence of a magnetic field. The emerging bandgap depends sensitively on the strength and orientation of the magnetic field which implies a tunable and large anisotropy of magnetoresistance in such kinds of topological materials. Following such a theoretical finding, we predict that in some candidates of NSLMs with a single nodal ring, such as the materials of CaP₃ family, a transition between metallic and insulating states driven by a magnetic field is possibly observed experimentally. Consequently, a magnetic field can be viewed as a novel mechanism for metal–insulator transition of solid materials, in additional to the well-known conventional ones such as the Anderson and Mott transitions. (paper)

[en] We perform a numerical simulation on the time evolution of an electronic wave packet in a Weyl semimetal (WSM) slab driven by a magnetic field. We find that the evolution trajectory of the wave packet depends sensitively on its initial spin state. Only with initial spin state identical to that of the Fermi arc state at the surface it localized, does the wave packet evolution demonstrate the characteristic cyclotron orbit of WSM previously predicted from a semiclassical viewpoint. By analyzing the eigen-expansion of the electronic wave packet, we find the chiral Landau levels (LLs) of the WSM slab, as ingredients of the wave packet, to be responsible for establishing the characteristic WSM cyclotron orbit. In contrast, the nonchiral LLs contribute irregular oscillations to the wave packet evolution, going against the formation of a well-defined cyclotron orbit. In addition, the tilted magnetic field does not affect the motion of the electronic wave packet along the Fermi arcs in the momentum space. It does, however, alter the evolution trajectory of the electronic wave packet in real space and spin space. Finally, the energy disalignment of the Weyl nodes results in a 3D cyclotron orbit in real space. (paper)

[en] Analytic solutions of the quasi-one-dimensional (q1D) electron states around an extended line defect in a graphene lattice are derived within the tight-binding model. Then, the electronic properties of this kind of boundary state in graphene are studied in detail. It is found that one subband composed of the even-parity boundary states emerges in the vicinity of the Dirac point. In particular, when the bulk band is gapped, such a one-dimensional subband remains in the bandgap, spanning two inequivalent valleys. In addition, this boundary state subband exhibits nontrivial dispersion, which can carry the valley polarized charge current flowing along the extended line defect. As a result, the line defect behaves like a one-dimensional channel for electronic transport. Moreover, its appearance in graphene or a hexagonal boron nitride sheet provides a promising way to print electric circuits in these two-dimensional materials. (paper)

[en] Based on the Kubo formula, we have studied the electron transport properties of a gapped graphene in the presence of a strong magnetic field. By solving the Dirac equation, we find that the Landau level spectra in two valleys differ from each other in that the n = 0 level in the K valley is located at top of the valence band, whereas it is at the bottom of the conduction band in the K' valley. Thus, in an individual valley, the symmetry between conduction and valence bands is broken by the presence of a magnetic field. By using the self-consistent Born approximation to treat the long range potential scattering, we formulate the diagonal and the Hall conductivities in terms of the Green function. To perform the numerical calculation, we find that a large bandgap can suppress the quantum Hall effect, owing to the enhancement of the bandgap squeezing the spacing between the low-lying Landau levels. On the other hand, if the bandgap is not very large, the odd integer quantum Hall effect experimentally, observed in the gapless graphene, remains in the gapped one. However, such a result does not indicate the half integer quantum Hall effect in an individual valley of the gapped graphene. This is because the heights of the Hall plateaux in either valley can be continuously tuned by the variation of the bandgap. More interestingly, we find that the height of the diagonal conductivity peak corresponding to the n = 0 Landau level is independent of the bandgap if the scattering is not very strong. In the weak scattering limit, we demonstrate analytically that such a peak takes a universal value e²/(hπ), regardless of the bandgap.

[en] By means of ab initio calculations within density-functional theory, the structural, electronic and magnetic properties of a zigzag-edged graphene nanoribbon (ZGNR) with 3d transition-metal atoms (TMAs) (Sc–Zn) embedded in the periodically distributed single vacancies are systematically studied. Different from the pristine ZGNR, all of these composite structures show the subband structures with nontrivial spin polarizations, regardless of the type and the embedding position of the TMA. Embedding one kind of these atoms (V, Cr, Ni, Cu or Zn) near one ribbon edge can cause a notable edge distortion. Except for the cases of Sc, Fe and Co doping, other kinds of TMAs embedded near an edge of the ribbon can suppress the inherent magnetism of the zigzag edge. By further analysis, we find that two effects are responsible for the suppression of edge magnetism. One is the variation of the occupied spin-polarized subbands due to the hybridization of the edge state of the ZGNR and 3d atomic states of the dopant. The other is the delocalization of the edge state caused by the exotic TMA. The unilateral magnetism of these TMA-embedded ZGNRs can be utilized to realize the spin-polarized electronic transport, which is the key electronic property in the context of spintronics applications of carbon-based materials. (paper)

[en] By means of density functional theory calculations, we predict a new two-dimensional phosphorus allotrope with the Kagome-like lattice(Kagome-P). It is an indirect gap semiconductor with a band gap of 1.64 eV. The gap decreases sensitively with the compressive strain. In particular, shrinking the lattice beyond 13% can drive it into metallic state. In addition, both the AA and AB stacked Kagome-P multi-layer structures exhibit a bandgap much smaller than 1.64 eV. Edges in the Kagome-P monolayer probably suffer from the edge reconstruction. An isolated zigzag edge can induce antiferromagnetic (AF) ordering with a magnetic transition temperature of 23 K. More importantly, when applying a stretching strain beyond 4%, such an edge turns to possess a ferromagnetic ground state. A very narrow zigzag-edged Kagome-P ribbon displays the spin moment distribution similar to the zigzag-edged graphene nanoribbon because of the coupling between the opposites edges. But the inter-edge coupling in the Kagome-P ribbon vanishes more rapidly as the ribbon width increases. These properties make it a promising material in spintronics. (paper)

[en] The RKKY interaction between two magnetic impurities absorbed on the surface layer of half-filled AB-stacked multilayer graphene (ABSMLG) is theoretically studied based on the lattice Green’s function technique. In comparison with the case of monolayer graphene, the RKKY interaction in such multilayer graphene presents distinct properties in some aspects. Firstly, from the numerical results, we find that the thickness of the ABSMLG influences the RKKY interaction in a complicated manner, depending on the odd/even parity of the number of layers and the sublattice attribution of the positions of the two magnetic impurities. Then, we derive the asymptotic expressions of the RKKY interactions in ABSMLG in the long-distance limit. For even-layered ABSMLG, we find that the RKKY interactions of the 1A-1A, 1B-1A and 1B-1B couplings fall off as 1/R², 1/R⁴ and 1/R⁶ (1A and 1B stand for, respectively, the sublattice points in the surface layer, which are positioned directly on the plaquette and on a lattice point of the layer underneath). On the other hand, in odd-layered ABSMLG, the decays of these interactions follow the 1/R², 1/R³ and 1/R³ power laws respectively. In addition, we also find that these analytical expressions are quantitatively valid to describe the RKKY interaction in ABSMLG when the distance between the two magnetic impurities is larger than the lattice constant of graphene by one order of magnitude. (paper)

[en] The frequency-response and dynamics of a dual-axis spin-exchange-relaxation-free (SERF) atomic magnetometer are investigated by means of transfer function analysis. The frequency-response at different bias magnetic fields is tested to demonstrate the effect of the residual magnetic field. The resonance frequency of alkali atoms and magnetic linewidth can be obtained simultaneously through our theoretical model. The coefficient of determination of the fitting results is superior to 0.995 with 95% confidence bounds. Additionally, step responses are applied to analyze the dynamics of the control system and the effect of imperfections. Finally, a noise-limited magnetic field resolution of 15 $\mathrm{f}\mathrm{T}{\sqrt{\mathrm{H}\mathrm{z}}}^{-<!--\; ???\; -->1}$ has been achieved for our dual-axis SERF atomic magnetometer through magnetic field optimization. (paper)

[en] By means of a numerical diagonalization approach, we calculate the electronic structure of a three-dimensional topological insulator (3DTI) quantum wire (QW) in the presence of a magnetic field. The QW can be viewed as a 3DTI film with lateral surfaces, when its rectangular cross section has a large aspect ratio. Our calculation indicates that nonchiral edge states emerge because of the confined states at the lateral surfaces. These states completely cover the valence band region among the Landau levels, which reasonably account for the absence of the $\mathrm{\nu <!--\; ??\; -->}<-<!--\; ???\; -->1$ quantum Hall effect in the relevant experimental works. In an ultrathin 3DTI film, inversion between the electron-type and hole-type bands occurs, which leads to the so-called pseudo-spin Hall effect. In a 3DTI QW with a square cross section, a tilting magnetic field can establish well-defined Landau levels in all four surfaces. In such a case, the quantum Hall edge states are localized at the square corners, characterized by the linearly crossing one-dimensional band profile. And they can be shifted between the adjacent corners by simply rotating the magnetic field. (paper)