[en] The author discussed shortcomings of traditional SCA, such as its in compact sequence, dead time and inapplicability to different pulses of different width, then described a new method that uses peak detector circuit to help implement functions of SCA and this method avoids limitations of traditional SCA. Thereafter, two circuits using this method are described

[en] A low input resistor of the gated integrator will result in the charge loss when the signal ends and the switch is still turned on. An impedance conversion circuit based on a common base amplifier is presented to solve this problem. In the electronic test and the application in ICF experiments it has been proved that this method can decrease the charge loss

[en] Graphical abstract: In situ transmission electron microscopy (TEM) investigations reveal the homogeneous nucleation of topologically close-packed (TCP) phase in Ni-base single crystal superalloy at elevated temperatures, which tends to grow toward primary γ/γ′ interface for element supply. Ru addition can decrease both the nucleation and growth rate, hence to suppress TCP precipitation effectively. Higher exposure temperature reduces the nucleation rate but increases the growth rate, finally accelerates the TCP precipitation. - Highlights: • In situ TEM was first applied to study the precipitation behavior of TCP phase. • The TCP phase nucleates homogeneously in γ matrix without preferential sites. • The TCP phase tends to grow toward primary γ/γ′ interface for element supply. • Ru addition can decrease both the nucleation and growth rate of TCP precipitation. • Higher temperature reduces nucleation rate but increases growth rate of TCP phase. - Abstract: In situ transmission electron microscopy was first applied to study the precipitation behavior of topologically close-packed (TCP) phase at elevated temperature in Ru-free and Ru-containing Ni-base single crystal superalloys. Ru addition can decrease both the nucleation and growth rate, hence to suppress TCP precipitation effectively. Higher exposure temperature reduces the nucleation rate but increases the growth rate, finally accelerates the precipitation. The TCP phases nucleate homogeneously in γ matrix without preferential sites, but tend to grow toward primary γ/γ′ interface for element supply. An orientation relationship is kept during nucleation and growth of μ phase in γ matrix, which is [1 1 0]_μ // [0 0 1]_γ and (0 0 1)_μ // (−1 1 0)_γ

[en] The impact of quantum confinement on the electrical characteristics of ultrathin-channel GeOI n-MOSFETs is investigated on the basis of the density-gradient model in TCAD software. The effects of the channel thickness (T_c_h) and back-gate bias (V_b_g) on the electrical characteristics of GeOI MOSFETs are examined, and the simulated results are compared with those using the conventional semi-classical model. It is shown that when T_c_h > 8 nm, the electron conduction path of the GeOI MOSFET is closer to the front-gate interface under the QC model than under the CL model, and vice versa when T_c_h < 8 nm. Thus the electrically controlled ability of the front gate of the devices is influenced by the quantum effect. In addition, the quantum-mechanical mechanism will enhance the drain-induced barrier lowering effect, increase the threshold voltage and decrease the on-state current; for a short channel length (≤ 30 nm), when T_c_h > 8 nm (or < 8 nm), the quantum-mechanical mechanism mainly impacts the subthreshold slope (or the threshold voltage). Due to the quantum-size effect, the off-state current can be suppressed as the channel thickness decreases. (semiconductor devices)

[en] The influences of the main structure and physical parameters of the dual-gate GeOI MOSFET on the device performance are investigated by using a TCAD 2D device simulator. A reasonable value range of germanium (Ge) channel thickness, doping concentration, gate oxide thickness and permittivity is determined by analyzing the on-state current, off-state current, short channel effect (SCE) and drain-induced barrier lowering (DIBL) effect of the GeOI MOSFET. When the channel thickness and its doping concentration are 10–18 nm and (5–9) × 10"1"7 cm"−"3, and the equivalent oxide thickness and permittivity of the gate dielectric are 0.8–1 nm and 15–30, respectively, excellent device performances of the small-scaled GeOI MOSFET can be achieved: on-state current of larger than 1475 μA/μm, off-state current of smaller than 0.1 μA/μm, SCE-induced threshold-voltage drift of lower than 60 mV and DIBL-induced threshold-voltage drift of lower than 140 mV. (semiconductor devices)

[en] In this paper, compact high temperature superconducting (HTS) multiplexers are presented for satellite communication applications. The first multiplexer consists of an input coupling node and three high-order bandpass filters, which is named triplexer. The node is realized by a loop microstrip line instead of conventional T-junction to eliminate the redundant susceptance due to combination of three filters. There are two eight-pole band-pass filters and one ten-pole band-pass filter with cascaded quadruplet structure for realizing high isolation. Moreover, the triplexer is extended to a multiplexer with six channels so as to verify the expansibility of the suggested approach. The triplexer is fabricated using double-sided YBa_2Cu_3O_7 thin films on a 38 × 25 mm"2 LaAlO_3 substrate. The experimental results, when compared with those ones from the T-junction multiplexer, show that our multiplexer has lower insertion loss, smaller sizes and higher isolation between any two channels. Also, good agreement has been achieved between simulations and measurements, which illustrate the effectiveness of our methods for the design of high performance HTS multiplexers. (paper)

[en] The interfacial and electrical characteristics of Ge metal–oxide–semiconductor (MOS) devices with a dual passivation layer of ZrON/GeON formed by NH₃- or N₂-plasma treatment are investigated. The experimental results show that the NH₃-plasma treated sample exhibits significantly improved interfacial and electrical properties as compared to the samples with N₂-plasma treatment and no treatment: a lower interface-state density at the midgap (1.64 × 10¹¹ cm⁻² · eV⁻¹) and gate leakage current (9.32 × 10⁻⁵ A/cm² at V_fb + 1 V), a small capacitance equivalent thickness (1.11 nm) and a high k value (32). X-ray photoelectron spectroscopy is used to analyze the involved mechanisms. It is indicated that more GeON and less GeO_x ( x < 2) are formed on the Ge surface during NH₃-plasma treatment than the N₂-plasma treatment, resulting in a high-quality high- k /Ge interface, because H atoms and NH radicals in NH₃-plasma can enhance volatilization of the unstable low- k GeO_x, creating high-quality GeON passivation layer. Moreover, more nitrogen incorporation in ZrON/GeON induced by NH₃-plasma treatment can build a stronger N barrier and thus more effectively inhibit in-diffusion of O and Ti from high- k gate dielectric and out-diffusion of Ge. (paper)

[en] A physical model of hole mobility for germanium-on-insulator pMOSFETs is built by analyzing all kinds of scattering mechanisms, and a good agreement of the simulated results with the experimental data is achieved, confirming the validity of this model. The scattering mechanisms involved in this model include acoustic phonon scattering, ionized impurity scattering, surface roughness scattering, coulomb scattering and the scattering caused by Ge film thickness fluctuation. The simulated results show that the coulomb scattering from the interface charges is responsible for the hole mobility degradation in the low-field regime and the surface roughness scattering limits the hole mobility in the high-field regime. In addition, the effects of some factors, e.g. temperature, doping concentration of the channel and the thickness of Ge film, on degradation of the mobility are also discussed using the model, thus obtaining a reasonable range of the relevant parameters. (paper)

[en] A threshold-voltage model for a stacked high-k gate dielectric GaAs MOSFET is established by solving a two-dimensional Poisson's equation in channel and considering the short-channel, DIBL and quantum effects. The simulated results are in good agreement with the Silvaco TCAD data, confirming the correctness and validity of the model. Using the model, impacts of structural and physical parameters of the stack high-k gate dielectric on the threshold-voltage shift and the temperature characteristics of the threshold voltage are investigated. The results show that the stacked gate dielectric structure can effectively suppress the fringing-field and DIBL effects and improve the threshold and temperature characteristics, and on the other hand, the influence of temperature on the threshold voltage is overestimated if the quantum effect is ignored. (paper)

[en] The neutron irradiation experiments for China Low Activation Martensitic (CLAM) steels were carried out in High Flux Engineering Test Reactor (HFETR), the effects of neutron irradiation on the hardening and embrittlement behavior of CLAM steels were investigated before and after neutron irradiation to 2.98 dpa at 430 ℃. The results showed that ultimate strength and yield stress of CLAM steel tested at room temperature are 710 MPa and 615 MPa, which decreased about 16 MPa and -0.5 MPa as compared with the unirradiated samples, respectively. And its Ductile to Brittle Transition Temperature (DBTT) shift was no obvious shift. While the upper shelf energy after irradiation was 217 J, which almost the same with that of unirradiated samples. The irradiation resistant of CLAM steel are slightly better than that of other Reduced Activation Ferritic/Martensitic (RAFM) steels under similar irradiation conditions. (authors)