[en] This paper presents a report on progress made in 1989 toward applying electronic market technology to the electric utility industry that enables widespread display and retrieval of inventory availability data. The computerized electronic market system is described and an experience report is presented on the use of a similar system by airlines, aircraft equipment suppliers, and aviation service firms to pool replacement component availability data for their mutual benefit and the support of an efficient market in replacement components. The application of large-scale electronic market technology to the electric utility industry is a significant new development

No abstract available

[en] This patent describes a method for steering or focussing beams such as ion or electron beams with a magnetic field. The method consists of: generating a large electric current in a straight conducting wire; projecting charged particles in proximity with the conducting wire; deflecting the charged particles by generating in proximity with the wire a circular magnetic field; confining each of the charged particles to a path which extends in a direction substantially coplanar with the conducting wire wherein a deflecting force generated by the coaxial magnetic field is exerted on each particle in the plane defined by the conducting wire and the path of the particle

[en] The 1/r electric field obtained between charged coaxial cylindrical electrodes is useful for focusing hollow ion beams in ion-microprobe and ion- implantation applications. The focusing strengths are mass-independent at nonrelativistic energies. Focused-particle densities can be enhanced by using a diverging-converging pair to flatten the dependence of focal length on incoming-beam radius. Transport of 425-keV and 1-MeV protons has been simulated and results are presented

[en] The structure of oxygen-implanted silicon (dose -7.3 x 10¹⁶cm^-2) has been studied by transmission electron microscopy (TEM). The as-implanted material exhibited four structurally different layers: defect-free monocrystalline silicon, amorphous silicon, monocrystalline silicon with a high defect density, and the perfect crystalline substrate. After heat-pulse annealing for 20 s at 800⁰C, 900⁰C, or 1000⁰C, the amorphous layer recrystallized resulting in polycrystalline silicon rich in oxygen. The uniform insulator buried layer was not formed under these specific implantation and annealing conditions

[en] Gamma ray spectrometry is used to determine the concentrations of U, Th and K in shards and soil samples. Used together with delayed neutron fission analysis these measurements reveal departures from the secular equilibrium usually assumed in routine dating analysis. If this measured dose is due to excess ²²⁶Ra significant dating errors could occur. (author)

No abstract available

[en] Angular scans of a number of alkali halides have been carried out using low (less than 10¹³ ions cm^-2) doses for each point to give approximately ''zero dose'' psi/sub 1/2/ values. The effects of increasing dose on chi/sub min/ are reported for beams of H⁺, D⁺ and He⁺ on a number of alkali halides up to a maximum dose of 10¹⁷ ions cm^-2. (6 figures, 15 references) (U.S.)

No abstract available

No abstract available