[en] When a small ac voltage with two frequencies was biased to a probe in low pressure inductively coupled plasma, sideband current signals were observed. It was found that two frequencies of the small bias voltage are mutually modulated in the plasma, and this modulation results in the sideband current signals. Experiments for measurement of the sidebands were carried out at various pressures, correlations between the sidebands and the plasma state were investigated. The sidebands were not observed when the plasma was not generated; therefore these signals were produced by the nonlinearity of the sheath. The electron temperature could be obtained from the sideband signals, and it was in good agreement with that from a single Langmuir Probe.

[en] Edge-to-center density ratios were measured by using a floating harmonics method in inductively coupled plasma (ICP) and were compared to the theoretical model. As the gas pressure increased, the plasma density at the center increased. However, plasma density at the edge showed a different trend; it had a maximum value at 10 mTorr with increasing gas pressures, regardless of ICP powers. This unexpected result could be explained by a global power balance equation.

[en] An in situ thickness measurement method of dielectric films (dual frequency method) was developed, and the thicknesses were measured in an inductively coupled plasma. This method uses a small ac bias voltage with two frequencies for thickness measurement. The dielectric thickness is obtained from measuring the amplitudes of the two frequency ac currents through a sensor, as well as using an equivalent circuit model describing impedance of the dielectric film and the plasma sheath. In the experiment, the thicknesses of Al₂O₃ film could be accurately measured in real time. To check the measurement reliability, the dual frequency method was compared with reflection spectrophotometry as a technique for optical thickness diagnostics. It was found that the dual frequency method agrees closely with reflection spectrophotometry at various rf powers and pressures. In addition, this method is very simple and can be installed anywhere in plasma reactors, in contrast with optical methods; therefore, it is expected to be applied to in situ surface diagnostics for various processing plasmas.