[en] Changes in microstructure and texture during annealing of polycrystalline cadmium selenide films have been investigated. The effects of annealing atmosphere and substrate material on the temperature interval, kinetics and texture of recrystallization have been established. The temperature of recrystallization initiation in cadmium selenide films on glass substrate precoated with SnO₂ decreases from 550 deg C for non-alloyed to 300 deg C for chlorine-alloyed layers and to 350 deg C for the layers alloyed with chlorine and copper. It is supposed that ease of recrystallization in the case of alloying is connected with the effect of alloy additions on vacancy concentrations in the material

[en] The initial layers of approximately 2.5 μm thickness are obtained by the method of thermal vacuum evaporation of the sublimated cadmium selenide powder with simultaneous selenium sputtering onto glass substrates. The layers have been doped by the ion implantation method Silver ions have been implanted at room temperatures with energy of 150-350 keV and doses of 10¹⁴-10¹⁶ ion/cm² upon doping the layers have been annealed in cadmium chloride vapours at 630, 650 and 670 K or in argon at 670, 720+ 770+ 820 and 870 K during 1.5 h. It is shown that cadmium selenide polycristalline layers doping by silver ions and the consequent annealing in CdCl₂ vapour or in argon cause different character of charge nonequilibrium carriers transfer which is connected with formation of inhomogeneities of various physical nature

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[en] Impurity luminescence in CdSe thin single crystal layers and bulk samples was investigated. Epitaxial CdSe layers were prepared by chemical transport reaction method in an open CdSe-H₂ system in a double-zone oven with wide variation of growth conditions. Sapphire and fluorite were used as supports. Layer crystallinity was checked by means of X-ray and electronographic methods. The study of intensity of the long-wave emission bands (lambda sub(m)=0.72, 0.81-0.82, 0.93-0.94 and 1.20 mcm) versus temperature showed that they are due to centers Esub(v)+0.06, Esub(v)+0.27, Esub(v)+0.48 and Esub(v)+0.60 eV. Existence of these centers in investigated CdSe samples is evident from photosensitivity and absorption on the same samples at 80-300 deg K. Emission at 0.82, 0.93 and 1.2 mcm is a result of electron capture from conductivity zone to centers Esub(v)+0.12, Esub(v)+0.48 and Esub(v)+0.60 eV. The change of luminescence intensity in the bands 0.93 and 1,2 mcm after annealing the samples in Se vapour may be explained by change of concentration or degree of occupation of the luminescence centers. Increase of intensity of impurity luminescence in the bands 0.93 and 1.2 mcm in the samples annealed at lower Se vapour pressure explained by the change of centers Esub(v)+0.48 and Esub(v)+0.6 eV concentrations should be associated (on the basis of thermal treatment conditions) with Cd vacancies or their complexes. Decrease of emission intensity in the bands 0.93 and 1.20 mcm in the samples annealed at the higher Se vapour pressure may be due to a decrease of concentration of degree of occupation of the centers Esub(v)+0.48 and Esub(v)+0.60 eV

[en] Photoluminescence and photosensitivity of CdSe monocrystals doped with silver ions are investigated. After silver ion implantation monocrystals are annealed in a flow of inert gas. Spectral characteristics of luminescence and photosensitivity are investigated at 77 K. It is shown that doping CdSe monocrystals with silver ions lead to the formation of new bands in photoluminescence and photosensitivity spectra; concentration of centres responsible for the 0.93 μkm luminescence band and a high photosensitivity of ion-doped layers in the region of absorption edge connected with it, increases