No abstract available

[en] The scheme of the energy-dispersive EXAFS spectrometer is discussed. The spectrometer will be used for solid-state investigations on the Kurchatov Synchrotron Radiation Source (KSRS). The main elements of the universal station are described, including the results of the position-sensitive X-ray-detector testing

[en] In this paper for the first time we have constructed the exact solutions of two boundary value problems of the theory of elasticity for an infinite strip with a central transverse crack on which a constant normal stress is given (even-symmetric deformation). In the first problem the sides of the strip are free, while in the second they are rigidly clamped. The solution is represented in the form of series in Papkovich–Fadle eigenfunctions. The expansion coefficients (Lagrange coefficients) have the form of simple Fourier integrals. The final formulas are simple and can easily be used in engineering. (paper)

No abstract available

[en] Imaging of buried epitaxial InAs QDs as well as thin films of PbS QDs was carried out by means of local photocurrent measurements using a conductive atomic force microscope. InAs dots appear as dark areas in the photocurrent map and PbS:PCBM thin films form domain-like structures showing enhanced photoactivity.

[en] The dependences of the separation probability of the Frenkel pair on the temperature and the position of the Fermi level in the band gap cause the dependences of primary radiation defects concentration on the irradiation temperature and impurity concentration. This conclusion is confirmed by study results of electrophysical and optical properties of silicon n⁺-p-p⁺ structures, irradiated by the proton flux with the energy of 40 keV and the fluence of 10¹⁵ cm⁻². (paper)

[en] Carbon nanotubes (CNTs) - rolled up sheets of graphite - appear in various forms. One way to produce CNTs is chemical vapour deposition (CVD) using carbon containing gases in the presence of catalysts like Fe. For the so-called substrate supported catalyst (SSC) method the catalyst is provided in form of particles at the substrate surface and is thus directly accessible for the carbon containing CVD gas flux to induce CNT growth. In this work we studied five different approaches to create and use catalytic nano-particles for CNT growth. The results of the CVD deposition experiments were analyzed with SEM and TEM. For all five approaches a set of CVD-parameters could be found that led to the formation of dense films of CNTs with different degrees of alignment. HR-TEM analysis showed either fishbone arrangement or multi-walled CNTs depending on the catalyst type

[en] The irradiation of semiconductor structures with low-energy protons is used to control changes in their properties at a depth ranging from 0.1 to 1000 μm. Devices manufactured from such structures have high sensitivities to changes in the state of the surface region. The paper is dedicated to studying the effect of radiation-induced defects produced by low-energy protons in a heavily doped diffusion region on the properties of Si structures with an n⁺‒p junction. The structures are irradiated with a flux of protons with an energy of 40 keV and a dose of 10¹⁵ cm⁻² at a sample temperature of 83 and 300 K. The distributions of the average number of interstitial Si, vacancies, and divacancies produced by one proton under these conditions per length unit of the projective range in the diffusion layer of an n⁺‒p junction are calculated. It is shown that the number of radiation-induced defects in the distribution maximum at a depth of 0.39 μm in a layer with n-type conductivity at a sample irradiation temperature of 83 K is significantly less than that at 300 K. This conclusion is confirmed by the results of studies of electrophysical and optical properties of irradiated n⁺‒p‒p⁺ structures.