[en] Electronic devices based on semiconductor heterostructures are used extensively in different areas of science and technology. One of the semiconductor materials most promising for operation under the conditions of external attacks is silicon carbide. The heterostructures SiC created by the layers of nanocrystalline SiC of different polytypes were grown by the method of direct ion deposition. The aim of the present work was to study the mechanisms of charge transfer in the nanocrystalline heteropolytype SiC films, deposited on leucosapphire single-crystalline substrates. The average size of the nanocrystals in the heterostructures SiC was 5 - 10 nm. To clarify the mechanisms of charge transport in the obtained films there was studied the temperature dependence of their electrical conductivity σ. The electrical measurements were performed by the four-contact method at direct current. The electrical conductivity of the heteropolytype film is the sum of the conductivity values of the parallel channels σ = σ₁ + σ₂ + σ_hj, where σ and σ₂ are the conductivity of the monopolytype regions which form the heteropolytype film, σ_hj, the heterojunction conductivity. It was found that main contribution to the electrical conductivity of the films belongs to the contact region of the heterojunction, i.e. condition σ₁ + σ₂ << σ_hj is fulfilled. This is due to the fact that in the contact region the charge transfer is realized by the multistep tunneling via discrete energy levels with close energies. These discrete energy states arise in the forbidden band due to the dimensional quantization. It was established that the characteristic energy of the charge transfer process is of the order 10 meV. (author)

[en] In this paper, the results on the electrochemical deposition of zinc in the track templates of a-SiO₂/Si – n are presented. Track templates were obtained by irradiation 200 MeV Xe ions, up to a fluence of 10⁸ ions/cm², followed by etching in an aqueous solution of HF. As a result of electrochemical deposition, nanocrystals of zinc oxide were obtained in the sphalerite and Zn hexagonal structure. A possible mechanism for the formation of structures is considered. (paper)