[en] Nitrogen-doped hydrogenated amorphous carbon films have been deposited on silicon substrates by radio-frequency plasma-enhanced chemical vapor deposition using different N₂/CH₄ gas ratios from 0 to 3. The real and imaginary parts, n and k, of the complex index of refraction of these films have been determined for wavelengths between 300 and 830 nm by spectroscopic ellipsometry. Excellent agreement has been found between measured and modeled spectra, in which an empirical dielectric function based on classical Lorentz oscillator and Tauc joint density of states, and a linear void distribution along the thickness of the films have been assumed. Decrease in the optical energy gap and increase in the extinction coefficient, k, with increase in nitrogen concentration have been observed. Refractive index, n, increases rapidly with increase in nitrogen concentration up to 6.8 at.% (∼7.0 at.%) and then increases slowly with further increase in nitrogen concentration. For all the samples, n is found to be highest at the film-substrate interface which gradually decreases towards the film surface. [copyright] 2001 American Institute of Physics

[en] Nitrogen doped hydrogenated amorphous carbon thin films have been deposited by rf plasma-enhanced chemical vapor deposition using CH₄ as the source of carbon and with different nitrogen flow rates (N₂/CH₄ gas ratios between 0 and 3), at 300 K. The dependence modifications of the optical and the structural properties on nitrogen incorporation were investigated using different spectroscopic techniques, such as, Raman spectroscopy, Fourier transform infrared spectroscopy, x-ray photoelectron spectroscopy, ultraviolet-visible (UV-VIS) spectroscopy, electron spin resonance (ESR), photoluminescence (PL) and spectroscopic ellipsometry (SE). Raman spectroscopy and IR absorption reveal an increase in sp²-bonded carbon or a change in sp² domain size with increasing nitrogen flow rate. It is found that the configuration of nitrogen atoms incorporated into an amorphous carbon network gradually changes from nitrogen atoms surrounded by three (σ bonded) to two (π bonded) neighboring carbons with increasing nitrogen flow rate. Tauc optical gap is reduced from 2.6 to 2.0 eV, and the ESR spin density and the peak-to-peak linewidth increase sharply with increasing nitrogen flow rate. Excellent agreement has been found between the measured SE data and modeled spectra, in which an empirical dielectric function of amorphous materials and a linear void distribution along the thickness have been assumed. The influence of nitrogen on the electronic density of states is explained based on the optical properties measured by UV-VIS and PL including nitrogen lone pair band. [copyright] 2001 American Institute of Physics

[en] Ho"3"+/Yb"3"+ co-doped NaGdF_4 up-conversion (UC) nano-particles were synthesized by thermal decomposition method. X-ray diffraction and FE-SEM image analysis were done to confirm the structure, morphology and determination of particle size. The UC emission spectra for as prepared as well as 100°C, 200°C, 300°C, 400°C, 800°C, 1000°C and 1200°C heated for 3h samples were recorded and there emission intensities were compared at a constant pump power of excitations 98.1 W/cm"2. The effect of emission intensity on decay time was also studied through focused and unfocused excitations. The synthesized material was successfully utilized in lateral finger mark detections on the glass substrate through powder dusting method.