[en] The power demand of ASDEX Upgrade (AUG) requires mainly for long discharges engineering activities devoted to optimising the existing power supply by reactive power compensation (RPC). The compensation will be provided by capacitor banks being energized by vacuum breakers. That solution is far less expensive than thyristor controlled compensation units but requires an accurate tuning with regard to the generator and load characteristics in order to keep transient phenomena at an acceptable level. Analytical and numerical investigations have been performed to investigate the operational boundary conditions and to derive a design with acceptable voltage and current surges under normal and fault conditions. (author)

[en] The generic structure of 1-, 2- and 3-point functions of fields residing in indecomposable representations of arbitrary rank are given. These in turn determine the structure of the operator product expansion in logarithmic conformal field theory. The crucial role of zero modes is discussed in some detail. (Abstract Copyright [2004], Wiley Periodicals, Inc.)

[en] This paper discusses the role that integrated computer-aided-engineering and computer-aided-design (CAE/CAD) can play to improve the design, modeling and analysis cycle in the development of one-of-a-kind high technology systems. The authors consider the specific requirements of SSC detector systems, and propose a candidate integrated CAE/CAD resource architecture for the SSC Laboratory. The authors report the authors' progress in the development of such a resource, and demonstrate its capabilities on a model detector

[en] Integrated computer aided engineering and design (CAE/CAD) is having a significant impact on the way design, modeling and analysis is performed, from system concept exploration and definition through final design and integration. Experience with integrated CAE/CAD in high technology projects of scale and scope similar to SSC detectors leads them to propose an integrated computer-based design, modeling and analysis resource aimed specifically at SSC detector system development. The resource architecture emphasizes value-added contact with data and efficient design, modeling and analysis of components, sub-systems or systems with fidelity appropriate to the task. They begin with a general examination of the design, modeling and analysis cycle in high technology projects, emphasizing the transition from the classical islands of automation to the integrated CAE/CAD-based approach. They follow this with a discussion of lessons learned from various attempts to design and implement integrated CAE/CAD systems in scientific and engineering organizations. They then consider the requirements for design, modeling and analysis during SSC detector development, and describe an appropriate resource architecture. They close with a report on the status of the resource and present some results that are indicative of its performance. 10 refs., 7 figs

[en] The generic structure of 4-point functions of fields residing in indecomposable representations of arbitrary rank is given. The presented algorithm is illustrated with some non-trivial examples and permutation symmetries are exploited to reduce the number of free structure-functions, which cannot be fixed by global conformal invariance alone. (Abstract Copyright [2005], Wiley Periodicals, Inc.)

[en] We report on the effects of ionizing radiation on 65 nm CMOS transistors held at approximately −20°C during irradiation. The pattern of damage observed after a total dose of 1 Grad is similar to damage reported in room temperature exposures, but we observe less damage than was observed at room temperature

[en] To compare mammography (MG), contrast-enhanced spectral mammography (CESM), and magnetic resonance imaging (MRI) in the detection and size estimation of histologically proven breast cancers using postoperative histology as the gold standard. After ethical approval, 80 women with newly diagnosed breast cancer underwent MG, CESM, and MRI examinations. CESM was reviewed by an independent experienced radiologist, and the maximum dimension of suspicious lesions was measured. For MG and MRI, routine clinical reports of breast specialists, with judgment based on the BI-RADS lexicon, were used. Results of each imaging technique were correlated to define the index cancer. Fifty-nine cases could be compared to postoperative histology for size estimation. Breast cancer was visible in 66/80 MG, 80/80 CESM, and 77/79 MRI examinations. Average lesion largest dimension was 27.31 mm (SD 22.18) in MG, 31.62 mm (SD 24.41) in CESM, and 27.72 mm (SD 21.51) in MRI versus 32.51 mm (SD 29.03) in postoperative histology. No significant difference was found between lesion size measurement on MRI and CESM compared with histopathology. Our initial results show a better sensitivity of CESM and MRI in breast cancer detection than MG and a good correlation with postoperative histology in size assessment. (orig.)

[en] Light yield and spatial uniformity for a large variety of configurations of scintillator tiles were studied. The light from each scintillator was collected by a Silicon Photomultiplier (SiPM) directly viewing the produced scintillation light (SiPM-on-tile technique). The varied parameters included tile transverse size, tile thickness, tile wrapping material, scintillator composition, and SiPM model. These studies were performed using 120 GeV protons at the Fermilab Test Beam Facility. External tracking allowed the position of each proton penetrating a tile to be measured. The results were compared to a GEANT4 simulation of each configuration of scinitillator, wrapping, and SiPM. (paper)

[en] The pixel detector is the innermost tracking device in CMS, reconstructing interaction vertices and charged particle trajectories. The sensors located in the innermost layers of the pixel detector must be upgraded for the ten-fold increase in luminosity expected at the High-Luminosity LHC (HL-LHC). As a possible replacement for planar sensors, 3D silicon technology is under consideration due to its good performance after high radiation fluence. In this paper, we report on pre- and post- irradiation measurements of CMS 3D pixel sensors with different electrode configurations from different vendors. The effects of irradiation on electrical properties, charge collection efficiency, and position resolution are discussed. Measurements of various test structures for monitoring the fabrication process and studying the bulk and surface properties of silicon sensors, such as MOS capacitors, planar and gate-controlled diodes are also presented