[en] In this paper the influence of ionization background on annealing processes in silicon layers implanted with subcritical doses of boron ions at RT was studied. An attempt has also been made to confirm lattice defects promoting the regrowth of the lattice. (author)

No abstract available

[en] Annealing, in the dark and under an ionization background of a 100 keV electron beam of intensity 7.5μA/cm² and the UV light of a 250 W mercury lamp, was studied in silicon samples implanted at room temperature with doses 3.10¹³ - 2.10¹⁵ of boron ions/cm², in the temperature range 400-900⁰C. Compared to thermal annealing in the dark, no change of the annealing course in the range 400-550⁰C is observed. At higher temperature ranges 550-650⁰C and 650-900⁰C the radiation annealing curve is shifted towards higher temperatures by an amount which depends on the dose of implanted boron ions. The activation energies obtained from isothermal annealing runs have higher values for the ionization background. A tentative interpretation attributes the retardment of the annealing processes to the charge-state modification of defects undergoing transformations induced by ionizing radiation. (author)

[en] Theoretical considerations and computer calculations of the energy loss of the particle in the crystal in dependence of its energy, directions in which it goes into the crystal and the depth of collision are demonstrated on the basis of the standard model. More general form of Boegh's equation is also presented. (author)

[en] The effect of ionisation, during thermal annealing of 140 keV phosphorus implantation in n-type silicon, on the concentration and nature of the traps, obtained using a transient capacitance technique, is described. The concentrations of the four traps observed after thermal annealing are changed by the ionisation; new traps appear. The results are briefly discussed in terms of ionisation-enhanced annealing. (author)

[en] Thermal annealing properties of silicon samples implanted at room temperature with P ions have been investigated both in the dark and under high energy electron irradiation and uv excitation at temperatures of 440 and 480⁰C. A significant increase of electrical activity under ionizing conditions has been observed compared to thermal annealing performed in the dark. The resistivity changes during annealing with ionizing radiation behave in a similar way to the ones in the dark with the exception of larger ion doses. The results obtained suggest that the ionization enhances the annealing of electrically active post-implantation defects compensating the implanted ions. (author)

[en] The influence of ionization created by low energy electrons on the transformations of defects in carbon implanted Si during thermal treatment in the range 200 to 500 ⁰C (50 ⁰C steps) is studied by the DLTS technique. Silicon single crystals implanted with carbon ions (1 x 10¹⁴ cm^-2, 100 keV) are subjected to a 100 keV electron beam with a fluence of 8 μA/cm². The results obtained show that ionization influences significantly the generation and stability of the defects. The ionization assisted transformation processes may play a role in the previously discussed mechanisms of enhanced diffusion or enhanced recrystallisation of the implanted crystals. (author)

[en] The electronic deep trap levels in (1 x 10¹² to 1 x 10¹⁴ cm^-2) C-implanted Si(n) after annealing in the temperature range of 150 to 600 ⁰C are measured by the DLTS method. The dependence of the concentration of two main defect levels created during implantation (0.41 eV, 0.63 eV) on the dose of the implanted C ions is measured. The average defect density profile for the 0.41 eV defect level obtained by DLTS is compared with the total density distribution of defects measured by RBS technique. (author)

[en] Short communication. 9 refs, 5 figs, 2 tabs

[en] Deep-level transient spectroscopy (D.L.T.S.) has been applied to the determination of defects in ion implanted silicon. Preliminary results concerning defects introduced by 130 KeV phosphorous ion implantation are described. Four electron traps are found: at Esub(c)-0.21eV, Esub(c)-0.39eV, Esub(c)-0.52eV and Esub(c)-0.58eV and their cross-sections estimated. The annealing behaviour in the range 450-800⁰C of these traps is described. (orig.)