[en] Short note. 1 fig

[en] Thermodynamical state of defect-impurity system (DIS) in monocrystal silicon after boron doping is studied. Crystal free energy F, surface resistivity ρ_s and IR radiation transmission spectra are experimentally measured. It is stated that DIS behaviour in crystal depends on the size of occupied area. In this relation two its states that may be classified as quasi-two-dimensional and three-dimensional are separated. Interaction of intensive luminous radiation pulse with doped semiconductor stimulated proceeding in a structure of two concurrent in thermodynamical relation processes of positive and negative annealings, that is realized in oscillating character of ΔF=Δ$F(Q) dependences. Thermodynamically DIS equilibrium corresponds to total activation of impurity and is provided only under optimal annealing conditions

[en] Stress-strain of silicon semiconductor plates under ion-beam etching is studied. Thermoplastic stress profiles are quite complicated and relaxed at about 3 s duration. Planes where stresses sign is changed and where stress gradient is great move with specific rate and shift on 7x10^-5 m distance. Generation of dislocation loops by Frank-Read source on distances exceeding ions runs in crystal is possible

[en] It was established experimentally qualitative correspondance of defect concentration profile out of ion retardation zone and pressure profile of elastic waves exited by interaction accelerated ions with crystal. The amount of generated defects is in proportion to inherent crystal defects

[en] Short note

No abstract available

No abstract available

[en] The wave description of the phase transition from gas into liquid is offered. Each phase is supposed to be a wave spreading through space. If the current frequency coincides with some resonant frequencies the fluctuation of the parameter of the order (short-period resonances) can take place. The critical point is determined by a critical resonant frequency that characterizes the system. The process of the formation of the ferromagnetic nanoclasters in the plasma, that contains corresponding metal component, is regarded as an example. (authors)

[en] Results of research behavior magnetic structure a ferromagnetic spherical nanoparticles iron by the radiuses 5-30 nanometers in an external magnetic field a method of computer modeling are presented. The analysis of hysteresis loops and vortex structure magnetization formation for particles of the various sizes is carried out. The dimensional effect in change of symmetry magnetization – analog of phase transition the second sort is established. Calculations were carried out by means of micromagnetic simulation package Nmag (authors)

[en] One of the ways to improve the strength properties, the temperature and radiation resistance of materials is the synthesis of nanocomposite systems, which in the simplest case are a matrix structured by nanoscale particles. The change in physical, mechanical, magnetic, thermophysical and other properties of nanoparticles can be related to deformation of the material due to surface tension, reduction of the coordination number in the near-surface layer, change in its symmetry group, restructuring the architecture of electronic shells, changing binding energy. A significant influence on the physical properties of nanoobjects can also have various structural defects. The dependence of Young's modulus of elasticity on the radius of a nanoparticle was determined in treatise. In order to determine the Young's modulus of elasticity of a nanostructured material, the resulting formula for E(R) must be transformed into a power law E(R)=A(R/R_Φ)^m. Similar to the Hall-Petch law. Moreover, A and m are defined on the interval 0≤R≤R₀ (where R₀ is the boundary value of R, when exceeded, the Young's modulus is equal to the value of E₀ for the bulk material). (authors)