[en] Magnetic tunnel junction (MTJ) micropillars were fabricated with integrated thermometers and a heater line (HL) for thermovoltage measurements. This novel thermometer configuration enabled a direct measurement of Δ T across the MTJ micropillar. The MTJ devices were patterned from a CoFeB/MgO/CoFeB stack, with a 1.2 nm to 1.6 nm MgO wedge across the wafer, resulting in resistance area products in the range of 0.7 kΩ · µ m²  <   R   ×   A   <  55 kΩ · µ m². This allowed the measurement of thermoelectric properties as a function of the tunnel barrier thickness. The thermometers showed a homogeneous heating behavior for all devices across the wafer. Combining the in-stack temperature measurements and finite element simulations the thermal profile across the MTJ structure and the thermopower were estimated with a noticeable improvement of the measurement accuracy. The studied MTJ structures showed tunneling magnetoresistance (TMR) ratios up to 125%, and tunneling magnetothermopower (TMTP) up to 35%. (paper)

[en] Spin torque driven excitations in spin valves and tunnel junctions are often investigated for a two magnetic layer system for which a polarizer (fixed magnetization) and a free layer can be distinguished. In the search for improved microwave properties and to understand the role of different coupling mechanisms between the magnetic layers, here, the excitation spectrum of an exchange coupled two layer synthetic ferrimagnet (SyF) system is investigated numerically with spin momentum transfer acting on both layers simultaneously. This self-polarised two layer system does not contain an external polarizer, and excitation of coupled modes arises due to the mutual spin transfer torque and the Ruderman-Kittel-Kasuya-Yosida interlayer exchange coupling. The current-field state diagrams of static and dynamic states are reported as a function of the interlayer exchange coupling strength. The numerically determined critical boundaries are well reproduced by an analytical stability analysis. The dynamic steady states reveal an optic-like mode at low magnetic fields, which becomes progressively acoustic-like for increased magnetic fields and currents. The frequency of these modes can be tuned by the film thickness and the strength of the interlayer exchange interaction. The results presented here will provide an important guide for designing spin torque oscillators that exploit the dynamic coupling between layers and, furthermore, they will provide a basis to test analytical models of spin torque driven coupled excitations

[en] Field-current phase diagrams were measured on in-plane anisotropy Co₆₀Fe₂₀B₂₀ magnetic tunnel junctions to obtain the spin transfer torque (STT) field-current switching window. These measurements were used to characterise junctions with varying free layer thicknesses from 2.5 down to 1.1 nm having a reduced effective demagnetizing field due to the perpendicular magnetic anisotropy at CoFeB/MgO interface. Diagrams were obtained with 100 ns current pulses, of either same or alternating polarity. When consecutive pulses have the same polarity, it is possible to realize the STT switching even for conditions having a low switching probability. This was evidenced in diagrams with consecutive pulses of alternating polarity, with 100% switching obtained at 4.7 MA/cm², compared to the lower 3.4 MA/cm² value for same polarity pulses. Although the low level of the current density window is higher in alternating polarity diagrams, the field window in both diagrams is the same and therefore independent of the pulse polarity sequence

[en] In this article, we report the measurements of the magnetothermoelectric power (MTEP) in metallic ferromagnetic thin films of ${\text{Ni}}_{80}$${\text{Fe}}_{20}$ (Permalloy; Py), Co and ${\text{CrO}}_2$ at temperatures in the range of 100 K to 400 K. In 25 nm thick Py films and 50 nm thick Co films both the anisotropic magnetoresistance (AMR) and MTEP show a relative change in resistance and thermoelectric power (TEP) of the order of 0.2% when the magnetic field is reversed, and in both cases there is no significant change in AMR or MTEP after the saturation field has been reached. Surprisingly, both Py and Co films have opposite MTEP behaviour although both have the same sign for AMR and TEP. The data on half metallic ferromagnet ${\text{CrO}}_2$ films show a different picture. Films of thickness of 100 nm were grown on ${\text{TiO}}_2$ and on sapphire. The MTEP behavior at low fields shows peaks similar to the AMR in these films, with variations up to 1$\%$. With increasing field both the MR and the MTEP variations keep growing, with MTEP showing relative changes of 1.5% with the thermal gradient along the $b$-axis and even 20% with the gradient along the $c$-axis, with an intermediate value of 3% for the film on sapphire. It appears that the low-field effects are due to the magnetic domain state, and the high-field effects are intrinsic to the electronic structure of CrO₂ and intergarian tunnelling magnetoresistance that contributes to MTEP as tunnelling-MTEP. Our results will stimulate the research work in the field of spin dependent thermal transport in ferromagnetic materials to further develop spin-Caloritronics.