[en] The initial layers of approximately 2.5 μm thickness are obtained by the method of thermal vacuum evaporation of the sublimated cadmium selenide powder with simultaneous selenium sputtering onto glass substrates. The layers have been doped by the ion implantation method Silver ions have been implanted at room temperatures with energy of 150-350 keV and doses of 10¹⁴-10¹⁶ ion/cm² upon doping the layers have been annealed in cadmium chloride vapours at 630, 650 and 670 K or in argon at 670, 720+ 770+ 820 and 870 K during 1.5 h. It is shown that cadmium selenide polycristalline layers doping by silver ions and the consequent annealing in CdCl₂ vapour or in argon cause different character of charge nonequilibrium carriers transfer which is connected with formation of inhomogeneities of various physical nature

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[en] It is shown that photoluminescence (PL) of zinc selenide in ''green'' spectrum region is determined by the presence of zinc vacancies caused by Ar⁺ ion implantation. The PL ''green'' maximum shift into longwave region at heat treatment temperature >= 400 deg C is found. It is established that a strong annealing of radiation defects in zinc selenide occurs at temperatures >= 650 deg C

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[en] Laser annealing is technologically simple, but it has been found ineffective for ZnTe and CdSe. This is because, at present, for most of the wide-bandgap A^IIB^VI compounds it is difficult to obtain powerful lasers with the requisite spectrum. Pulsed electron annealing provides the possibility of varying the thickness of the annealed layer over wide limits and of controlling accurately. The technological possibilities for pulsed electron annealing of ZnSe have been studied. It was shown that pulsed electron annealing in A^IIB^VI compounds has a number of specific properties which must be kept in mind in its use. In the present work, the authors consider these properties and carry out a generalization of the results obtained previously. 15 refs., 4 figs

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[en] Different theoretical approaches developed for the quantitative estimation of component concentrations in CdS_xSe_1-x solid solutions by Auger electron spectroscopy were verified. It is shown that the first-principle calculations taking all of the matrix corrections (λ, r, z, R, N, etc.) into account give minimal systematic errors of 0.2 to 10.7%. 19 refs.; 2 figs.; 5 tabs

[en] Photoluminescence and photosensitivity of CdSe monocrystals doped with silver ions are investigated. After silver ion implantation monocrystals are annealed in a flow of inert gas. Spectral characteristics of luminescence and photosensitivity are investigated at 77 K. It is shown that doping CdSe monocrystals with silver ions lead to the formation of new bands in photoluminescence and photosensitivity spectra; concentration of centres responsible for the 0.93 μkm luminescence band and a high photosensitivity of ion-doped layers in the region of absorption edge connected with it, increases

No abstract available