[en] Highlights: • (Co + Al)-doped ZnO films were synthesized by RF magnetron sputtering in atmosphere Ar + H₂. • Zn/Co ratio in the films was found to be several times lower than in the target used. • Conditions for the formation of gaseous ZnH₂ during films deposition are considered. • Secondary phases related to Co and Al were not detected by XRD. • Films exhibit ferromagnetic almost hysteresis-free behavior at room temperature. (Co + Al)-doped ZnO films have been synthesized by the RF magnetron sputtering. Films of this composition have first been obtained in mixed atmosphere of Ar + H₂. High hydrogen concentration of 20–50% has been used together with high enough substrate temperature of 450 °C. The used technological conditions affected the morphology, chemical composition, optical, electric, and magnetic properties of the films to an even more than in the case of Co-doped ZnO films synthesized under the same conditions and studied earlier. The films exhibit ferromagnetic behavior at room temperature with much greater magnetization and magneto-optical activity compared to the Co-doped films. At the same time, the hydrogenated films show an increase in electric conductivity in comparison with samples synthesized in the atmosphere of Ar + O₂. The magnetic nature of the hydrogenated films has been associated with the defect-related mechanism.