[en] New annealing methods of ion implanted semiconductors can be broadly classified into three categories: adiabatic annealing, thermal flux annealing and rapid thermal annealing. In recent years, by using these methods, we have been investigating laser annealing of ion implantation damage, laser alloying to the formation of an ohmic contact between GaAs and AuGeNi, and laser recrystallization of polycrystalline semiconductor films on insulating substrates. In this paper, we focus on the discussion of rapid thermal annealing of BF₂⁺ implanted Si using RF graphite heater and CW Ar⁺ laser recrystallization of InP films on oxidized Si substrate

[en] As a consequence of very low thermal conductivity of the thick buried oxide layer, the silicon-on-insulator power devices have inherent self-heating effects. In order to minimize the above effects, the silicon-on-insulator-multilayer structures were successfully formed by electron beam evaporation of silicon on porous silicon and epitaxial layer transfer for the first time. The qualities of the structures were investigated using cross-sectional transmission electron microscopy and spreading resistance profiling. Experimental results showed that the buried Si₃N₄ layers were amorphous and the new SOIM sample had good structural and electrical properties

[en] Large area aluminium nitride (AlN) films were synthesized by ion-beam-enhanced deposition (IBED) method. Characterizations of the films revealed that the quality of the films strongly depends on the evaporation rate of Al. The best quality was obtained with the evaporation rate of Al at 0.5 Angst/s, and the film has excellent dielectric property and a smoother surface with roughness RMS values of 0.13 nm, and could be bonded directly with a hydrogen-implanted wafer at room temperature. Consequently, a novel silicon-on-insulator structure with AlN as insulating layer has been formed by the Smart-Cut process

[en] Silicon nanorods (about 10-35 nm height) on silicon and porous silicon substrates were synthesized using ultra-high vacuum electron-beam evaporation in the present of a Fe catalyst. Atomic force microscopy (AFM) is used to estimate the dimension and check the morphology of the silicon nanoclusters. The electron field emission is used to reveals the property of silicon nanorods grown on different substrates

[en] Si⁺ was implanted into top silicon of SOI (silicon on insulator) material formed by N⁺ implantation to amorphize its surface, interface area between the top and the buried layer, and the whole top silicon. Then these SOI wafers and those without implantation were implanted by B⁺ at 25 keV with dose of 1 x 10¹⁵/cm² and annealed in dry N₂ ambient at different temperatures in the range of 500 C deg to 900 C deg for 30 min. Glancing RBS/c measurement has shown that a solid phase epitaxial regrowth from the inner part of top silicon towards the surface or in the opposite direction exists respectively during post annealing if the surface or interface area of top silicon is amorphized. When the whole top silicon is amorphized, there is a phase transition from amorphous silicon to polysilicon for the silicon during post annealing in the temperature range from 500 C deg to 600 C deg, and no solid phase epitaxial regrowth is found when the temperature is increased to 900 C deg. Spreading resistance probe measurements show that the activation rate of implanted boron in the top silicon is lower than that in crystalline bulk silicon. The activation rate of implanted boron in the top silicon can be increased either by using Si⁺ implantation (to amorphize the surface or the interface area of top silicon) or by the solid phase epitaxial regrowth

[en] The application of silicon-on-insulator (SOI) substrates to high-power integrated circuits is hampered by the self-heating effect due to the poor thermal conductivity of the buried SiO₂ layer. We introduce aluminum nitride (AlN) thin films formed by ultra-high vacuum electron-beam evaporation with ammonia as an alternative. The chemical composition, surface morphology, and electrical properties of these films were investigated. The film synthesized at 800 deg. C shows a high AlN content, low surface roughness with a root-mean-square value of 0.46 nm, and high electrical resistivity. Based on thermodynamic analysis and our experimental results, the mechanism of AlN formation is proposed

[en] The N-channel MOSFETs fabricated on SIMOX wafers made by using multiple-implantation-and-annealing techniques are irradiated by ⁶⁰Co gamma rays accumulatively. The subthreshold curves and threshold voltage shifts after irradiation at different bias conditions and doses are measured. The irradiation effects are compared with those of NMOS fabricated on bulk silicon, showing that the total dose radiation tolerance of the former is inferior to the latter. The effects of trapped-oxide charge and interface traps on the threshold voltage shifts, and some methods to improve the radiation hardness of NMOS/SIMOX are discussed

[en] Slow positron beam was used to investigate the solid state reaction of Co/Si and Co/Ti/Si. Variable-energy (0-20 keV) positrons were implanted into samples at different depths. The Doppler broadening of the annihilation γ-ray energy spectra measured at a number of different incident positron energies is characterized by a line-shape parameter, S. It was found that the measured S parameters are sensitive to thin film reaction and crystalline characteristics. In particular, the S parameter of epitaxial CoSi₂ formed by the ternary reaction is quite different from that of the polycrystalline CoSi₂ formed by direct reaction of Co with Si

[en] LiTaO₃ single-crystals have been implanted by hydrogen or boron mixed with hydrogen ions. The behavior of ion implantation and annealing has been investigated because they are the essential problems to be investigated for checking the possibility to realize LiTaO₃ single-crystal layer transfer on other substrates. Optical microscope image shows that LiTaO₃ implanted with 5x10¹⁶ ions/cm² H⁺ will generate bubbles at the temperature of 250 deg. C with air ambient. Atomic force microscopy (AFM) image shows that the bubbles would make the surface of LiTaO₃ split at 600 deg. C, but the samples that have been implanted with both B⁺ and H⁺ did not generate any bubbles, even when annealed at temperatures as high as 800 deg. C for 20 min in air ambient. The damage behavior and/or internal stress because of ion implantation and recovery of damage after annealing were also investigated by X-ray rocking curves and Rutherford backscattering spectroscopy and channeling (RBS/C)

[en] Arsenic ions were implanted into silicon-on-insulator (SOI) structures at an incident energy of 100 keV to a dose of 2 x 10¹⁵ cm^-2. Conductive top layers were formed in the SOI structures after annealing at 1200^oC for 20 s. Infrared reflection spectra in the wave number range of 1500-5000 cm^-1 were measured and interference fringes, related to free-carrier plasma effects, were observed. By detailed theoretical analysis and computer simulation of infrared reflection spectra, the carrier concentration, the carrier mobility, and the carrier activation efficiency were obtained. The physical interpretation of the results and a critical discussion of the sensitivity of the data, fitted to variation in the parameters, are given. (author)