[en] Short note

[en] The paper deals with the investigation of the temperature-temporal postradiative-relaxation of the absorption value in the maximum of the F-band in spectra of LiF crystals with the oxygen content of 1x10^-5 1.3x10^-3 mol.%. It is shown that the oxygen impurity does not effect on the formation efficiency during action of the F-centers pulse within the temperature interval from 80 to 300 K. The accumulation efficiency of F-centers does not depend on the impurity within the temperature region from 80 to 180 K and grows with increasing the impurity and the temperature at 180< T≤300 K

[en] The resolving-time spectrometry method is used to investigate relaxation processes in the F, F₂⁺, F₂ color centers in LiF crystals irradiated by a pulsed electron beam at 300 K. It is found that the F₂ center formation efficiency is proportional to the irradiation dose and to the pulsed electron beam frequency

[en] The spectral-kinetic characteristics of LiF-WO₃ and ZnWO₄ crystals luminescence at pulsed electron excitation are studied within 15-300 K temperature range. It is established that in LiF-WO₃ containing OH-groups spectrum of nanosecond component is caused by lighting of O₂^- molecules with pronounced vibronic structure. The microsecond components of lighting in these crystals are similar and correlate with luminescence excitation in oxyanion complexes

[en] We report time-resolved measurement of emission and absorption of F²- and F²-centers in the crystal of LiF following excitation by pulsed ionizing radiation at a temperature between 80 and 300 K. It is found that the formation of F²-centers increases as a function of temperature in the 80 to 200 K range and at temperature higher than 200 K it is practically constant up to 300 K. We conclude that the electron is captures by F² in a triplet state to give an F²-center

[en] The photoluminescence (PL), change in the optical absorption and radioluminescence (RL) with the time after the end of the electrons pulse effect on the LiF crystals by various modes of irradiation and the initial radiation deficiency are studied by the pulse spectrometry method. The difference in the properties of the RL and PL ionized F₂⁺ and F₃⁺-centers is revealed, the existence of several mechanisms of radiation formation of each of the centers differing by the energy and kinetic parameters, as well as by the character of temperature dependences is determined. It is proved that ionized centers in a radiative state are formed in the process of interaction of the corresponding neutral center with holes of the various degree thermalization. The mechanism for excitation of these centers luminescence is proposed

[en] By methods of the time-resolution pulsed spectroscopy the mechanism of F₂-centers formation in LiF crystals within the dose range < 6x10⁴ Grad is investigated. It is found that the energy yield of the F₂-centers from the radiation pulse-repetition rate is of the form of a curve with maximum whose position is determined by the crystal temperature during irradiation and correlates with the concentration of the F₂⁺-centers being in the crystal to the moment of the radiative influence

[en] Short note. 1 fig.; 2 refs

[en] Formation mechanism of F^-₂-centers in LiF crystals under pulsed electron irradiation is studied using time resolution pulsed spectrometry techniques. Effect of irradiation temperature, F⁺₂-concentration and F₂-centers on efficiency of F₂-center formation is determined. Formation of F^-₂-centers is shown to occur during ≤ 2 x 10^-8 s mainly in singlet state due to electron localization in F₂-center in triplet state and flip effect. F-centers in triplet state are formed by two ways: due to radiation excitation of F₂-centers and during electron localization in F⁺₂-center

[en] Processes of producing autolocalized excitons and F-centers under effect of nanosecond duration electron flux pluse within 80-600 K temperature region in CaF₂ and LiF crystals are investigated by pulsed spectrometry methods with time resolution. It is shown that the production of F-H-pairs is an alternative to creating autolocalized excitons in a triplet state with temperature increase under irradiation. A comparative analysis of effectiveness of processes of creating elementary defects in the crystals investigated is given. 15 refs., 3 figs