[en] A correlation between the amount of disorder measured by channeling and the trajectory of measured ellipsometric angles (PSIδ) is reported. The implantation was performed by ₁₁B⁺, ₂₈Si⁺, ₃₁P⁺, ₄₀Ar⁺, ₇₂Ge⁺, ₇₅As⁺, ₂₀₉Bi⁺ ions at room temperature. For fully amorphous samples the thickness data were obtained from channeling and the complex refractive index originated from a 145 nm thick amorphous layer. These experimental values were used to compute a theoretical curve in the PSI-δ plane. The good agreement between the theoretical curve and experimental data provides a non-destructive, rapid and non-contact method to estimate the thickness of the amorphous layer. For buried and partially disordered layers a qualitative interpretation of different trajectories depending on the ion species and other implantation conditions such as energy and dose in the PSI-δ plane can be given on the basis of channeling measurements in certain cases. It is also pointed out that plasma stripping plays an important role in preparing implanted samples for ellipsometry by removing the polymerized hydrocarbon film without affecting the disordered layer. (author)

[en] RBS and ellipsometric investigations were combined to separate the contribution of radiation damage and overlayer contamination. It is pointed out that disorder effects which were produced by silicon self-implantation are shielded without proper surface cleaning. For cleaning, plasma stripping proved to be an effective method. The change in psi parameter could be correlated with the degree of amorphousness. It seems that Δ parameter ''feels'' crystalline-amorphous phase transition on low dose ³¹P⁺ and ²⁷Al⁺ implants. No clear evidence was found for impurity effects on high-dose ⁷⁵As⁺ and ³¹P⁺ implants. (author)

[en] The most important parameters of the analytical use of the Moessbauer-effect have been described. The dependence of ion species on the pH was investigated in frozen chelate complex solutions by Moessbauer-spectroscopy. The method is applicable for quantitative determinations, too. (K.A.)

[en] Using glancing incidence (a target tilt between 80 deg-83 deg), the depth resolution of ¹⁶O(α,α)¹⁶O resonance for oxygen detection has been improved by a factor 5-7 depending on the depth. The more buried the oxide, the more straggling contribution is observed. Besides, at present scattering geometry an additionally 3.5 times better detection limit is achieved. (author)

[en] If a monoenergetic ion beam is bombarding a target through an absorber foil tilted continuously (i.e. its effective thickness changing continuously), the depth distribution of the implanted ions in the sample depends on the way the absorber is moving. The present paper describes a way of absorber tilting for obtaining a uniform depth distribution and its experimental verification in the case of MeV energy helium ions implanted into aluminium target. (author)

No abstract available

[en] During MeV ¹⁴N⁺ backscattering analysis to detect sub-monolayer heavy impurities, a ''beam effect'', i.e. high impurity loss was found. To clarify the situation a systematic study was done on gold evaporated films (in the thickness range of 0.5-3200 atom/nm²) onto silicon. Results suggest that sputtering of cascades induced by energetic nitrogen ions is responsible for the phenomenon. The sputtering yield of gold was a linear function of surface coverage in the range of 0.5-130 atom/nm². For thick overlayers ((>=) 800 atom/nm²) a saturation value of S approximately equal to 0.8 gold/N⁺ was found. Between these two regions intermediate behaviour was experienced. A rough theoretical model is outlined for overlayer sputtering in the MeV energy region. (author)

[en] Trying to outline the energy dependence of surface deformations such as exfoliation and flaking on candidate CTR first-wall materials, stainless steel and two types of inconels were bombarded by 0.8, 1 and 4 MeV helium ions. All the bombarded spots could be characterized by by large exfoliations covering almost the total implanted area. No spontaneous rupture was observed except on one type of inconel where flaking took place right after reaching the critical dose. After mechanical opening of the formations, similar inner morphology was found as in our previous studies on gold. (author)

[en] Helium was implanted into Cz <111> p-type silicon wafers at 40 keV for various doses between 1x10¹⁶ He⁺ cm^-2 and 1x10¹⁷ He⁺ cm^-2. Furnace Anneals were subsequently applied at temperatures ranging from 650 deg. C up to 1000 deg. C. The optical models for the as-implanted samples are based on the coupled half-Gaussian model developed by Fried et al. As point defects and cavities coexist in the as-implanted sample, the original model combining two half-Gaussian profiles was modified. Both the distributions of point defects and cavities were described by Gaussian profiles in the new model, each of them using two coupled half-Gaussians. The optical model allows the overlapping of the profiles of defects and cavities. A fitting procedure, called 'multiple random search', was applied to minimize the probability of getting in a local minimum. Using this new model, the measured spectra were well fitted, while there was no acceptable fit possible with conventional models. The annealed samples could be well described by cavity profiles only. Different models were investigated including Gaussian profiles or profiles with arbitrary distributions using independent volume fractions of cavities in the sub-layers. The results were crosschecked by transmission electron microscopy micrographs, showing a good agreement

[en] The mechanism of blister formation was investigated on cold-rolled gold target by 3.52 MeV helium ion bombardment. The critical dose was found to be 6x10¹⁷He⁺/cm² under the given experimental conditions. To study the inner morphology of the blisters, they were opened mechanically. Based on these observations several new features are reported. A speculation of high-energy blister formation is discussed, based on the fact that the diameter increases with sudden size changes. It is pointed out that in MeV energy region this formation could be exfoliation rather than blister formation confirming the previous investigations. (author)