No abstract available

No abstract available

No abstract available

No abstract available

[en] This paper reports the results of investigations of the operation of a fast current opening switch, with a 10/sup 13/-10/sup 16/ plasma density produced either by dielectric surface flashover or by explosive emission of graphite. A series of two pulses was applied to two diodes in parallel. The first pulse produced plasma in the first diode which closed that diode gap by the arrival time of the second pulse. The first, shorted, diode then acted as an erosion switch for the second pulse. A factor of 2.5-3 power multiplication was obtained under optimum conditions. The opening-switch resistance during the magnetic insulation phase, neglecting the electron losses between the switch and the generating diode, exceeded 100 Ω. The duration of the rapid opening phase was less than 5 ns under optimum conditions. This method of plasma production does not require external plasma sources, and permits a wide variation of plasma density, which in turn allows high inductor currents and stored energies

[en] The annealing of radiation defects in GaAs by a supercurrent proton beam with currents up to 200 A cm^-2 and 4.8 MeV energy was studied. The positron annihilation method (measurement of angular distribution of annihilation photons) has been used to study the depth profiles of radiation defects in solids. Profiles of vacancy-type defects in GaAs irradiated by a supercurrent proton beam have been measured. (orig.)

[en] The profile of radiation damages is plotted by means of measuring angular distribution of annihilation protons (ADAP) and layer scouring in GaAs crystals, irradiated with high-current proton beam. The results on radiation annealing of GaAs crystals with preliminarily induced radiation defects are presented. Experimental data on the effect of intensity and dose of high-current proton irradiation in GaAs crystals on ADAP curve parameters are given

[en] In this paper we report the first results on the effects of high-current pulsed proton beams on the structure of semiconductor crystals for silicon and gallium arsenide. We found that proton pulses of optimum current density can anneal growth and radiation defects in ''imperfect'' crystals; we call this the pulsed proton annealing effect. When Si and GaAs crystals are irradiated by a high-current proton beam, many defects are produced as the current density j of the beam increases; when j reaches a threshold value j/sub t/hr, the crystal is destroyed

[en] Regimes and phases of operation of plasma-erosion current breaker are experimentally investigated. Plasma with 10³-10¹⁶ cm^-3 density is produced due to surface breakdown of dielectrics or explosive emission of electrons on graphite. Investigation results are characterized by low breaking current (20-40 kA), potential operation at higher currents. The breaker fast-response permitted to obtain 12-13 ns voltage pulses with inductive accumulation of energy

[en] The effect of decreasing the defect generation rate in GaAs samples, which were previously irradiated by supercurrent ion beams under certain conditions, is discussed. (author)