[en] Samples of the 6H α-SiC crystal have been implanted with a variety of doses of silver ions from a MEVVA ion source at 50 kV potential and room temperature. Tests including microhardness measurements, SEM of indentations, Raman spectrograph, RBS and XPS were carried out. The results indicate that the SiC crystal is changed from a brittle state into a ductile one by Ag ion implantation and an amorphous layer is formed at the surface of the implanted α-SiC sample. The lowest dose for the formation of amorphous state is about 10¹⁴-10¹⁵ Ag⁺/cm². XPS of Ag3d_5/2 for the sample implanted with 5 x 10¹⁶ Ag⁺/cm² shows that in the implanted layer of SiC, silver exists in a metallic state. According to the features of the MEVVA ion source which produces multiple charged silver ions, the present results are discussed and compared with those from literature

[en] Objective: To observe the efficacy and adverse effects of conventionally fractionated (CF) versus hypofractionated (HF) three-dimensional conformal radiotherapy (3DCRT) for hepatocellular carcinoma (HCC) with portal vein tumor thrombosis. Methods: A retrospective analysis was performed on the clinical data of 65 patients with HCC suitable for 3DCRT from 2008 to 2012. These patients were randomly divided into HF group (n =32) and CF group (n =32). The HF group received 3DCRT at a total dose of 45-55 Gy (3-4 Gy/fraction, 3-5 fractions/week), while the CF group at a total dose of 40-56 Gy (2 Gy/fraction, 5 fractions/week). Results: The follow-up rate was 100%.For the HF group and CF group, the short-term response rates were 72% vs. 55% (P=0.034), the 1-year local control rates were 72% vs. 55% (P=0.034), the 1-year overall survival rates were 59% vs. 45% (P=0.042), and the numbers of individuals with grade 1-2 acute gastrointestinal reactions, deterioration of liver function, and radiation hepatitis were 14 vs. 11, 8 vs. 8, and 1 vs. 0, respectively (P=0.237). Conclusions: HF 3DCRT is superior to CF 3DCRT in the treatment of HCC. (authors)

[en] Coupled bioelectrochemical system-upflow anaerobic sludge blanket (BES-UASB) was utilized for wastewater treatment containing 2,4-dichloronitrobenzene (DClNB). The results indicated that a proper voltage enhanced the DClNB reduction, however, over high voltage presented a negative impact (2.0 V). Synergistic effect of external voltage and anaerobic sludge was observed, and dechlorination efficiency reached 57.8 ± 5.4% in the coupled BES,  which was higher than the sum of anaerobic sludge and electric system (48.2%). Moreover, the coupled system was more tolerant of high salinity and pollutant concentration. Dehydrogenase activity (DHA) was related to microbial electron transfer activity and DHA reached a maximum 453 ± 33 μgTF g⁻¹VSS h⁻¹ in the coupled reactor which was 1.6-fold that of the control, meanwhile, extracellular polymeric substances (EPS) content was significantly enhanced in the presence of external voltage. In summary, the coupled BES-UASB systems could be an alternative for removal of recalcitrant pollutants such as DClNB.

[en] In this article, the progress of the full-scale multi-dimension static test for International Thermal Experiment Reactor (ITER) gravity supports is summarized, including the design, finite element model analysis, fabrication and measurement methods of static loading test for the mock-up of ITER gravity supports. (authors)

[en] Here we report that TiSe₂ thin films can be epitaxially grown on TiO₂ substrates despite different lattice symmetry between the two materials. The TiSe₂ thin films can be prepared on TiO₂ via molecular beam epitaxy (MBE) in two ways: by conventional co-deposition using selenium and titanium sources, and by evaporating just selenium on reconstructed surfaces of TiO₂. Both growth methods yield crystalline thin films with similar electronic band structures. TiSe₂ films on TiO₂ substrates exhibit large electron doping and a lack of charge density wave (CDW) order, which is different from both bulk single crystal TiSe₂ and TiSe₂ thin films on graphene. These phenomena can be explained by selenium vacancies in the TiSe₂ films, which naturally occur when these films are grown on TiO₂ substrates. Our successful growth of transition metal dichalcogenide (TMDC) films on a transition metal oxide (TMO) substrate provides a platform to further tune the electrical and optical properties of TMDC thin films. (letter)