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No abstract available
Journal
Verhandlungen der Deutschen Physikalischen Gesellschaft; ISSN 0420-0195; 
; v. 16(6); p. 840
; v. 16(6); p. 840
[en] Pixel detectors made of semi-insulating GaAs have already been successfully tested for their application as tracking detectors in high energy physics experiments. For the operation of large arrays of pixel sensors, a technology allowing a two-dimensional interconnect with a high yield is necessary. For this purpose a bump bonding process was developed. In this paper the, yield and the resistance of the interconnections is analyzed. With more than 2700 interconnections on special test structures the resistance of a single bump-bond is consistent with zero Ohm and the yield was determined to be 92%
Journal
Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment; ISSN 0168-9002; ; CODEN NIMAER; v. 470(3); p. 571-575
; CODEN NIMAER; v. 470(3); p. 571-575
[en] Pixel detectors made of semi-insulating GaAs have already been successfully tested for their application as tracking detectors in high energy physics experiments. For the operation of large arrays of pixel sensors, a technology allowing a two dimensional interconnect with a high yield is necessary. For this purpose an indium based bump bonding process has been developed. Especially the generation of the indium bumps on the surface of the GaAs pixel detector was optimized. The development of these processing steps is described. In order to investigate the influence of these steps and of the bonding procedure on the detector performance, I-V-characteristics of bump bonded GaAs pixel detectors were analyzed
Journal
Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment; ISSN 0168-9002; ; CODEN NIMAER; v. 470(3); p. 576-582
; CODEN NIMAER; v. 470(3); p. 576-582
No abstract available
Journal
Verhandlungen der Deutschen Physikalischen Gesellschaft; ISSN 0420-0195; ; v. 17(8); p. 1427
; v. 17(8); p. 1427
[en] GaAs strip detectors are of interest because of their radiation hardness at room temperature and the high absorption coefficient of GaAs for x-rays. The detectors currently under development will be used in the VLQ-experiment at the H1 experiment at the HERA collider. This will be the first high energy physics experiment where GaAs detectors will be used. The detectors have a sensitive area of 5 x 4 cm with a pitch of 62 μ m. Due to the high density of channels the biasing resistors and coupling capacitors are integrated. For the resistors a resistive layer made of Cermet is used. The properties of the first fully integrated strip detector are presented
Journal
No abstract available
Journal
Verhandlungen der Deutschen Physikalischen Gesellschaft; ISSN 0420-0195; ; CODEN VDPEAZ; v. 36(3); p. 35
; CODEN VDPEAZ; v. 36(3); p. 35
No abstract available
Source
Rollnik, H.; Pfeil, W. (eds.); International Union of Pure and Applied Physics, London (UK); Deutsche Physikalische Gesellschaft e.V., Hanau (F.R. Germany); Bundesministerium fuer Forschung und Technologie, Bonn (F.R. Germany); Ministerium fuer Wissenschaft und Forschung des Landes Nordrhein-Westfalen, F.R. Germany; p. 527; ISBN 0720402905; ; 1974; North-Holland Publishing Company; Amsterdam; 6. international symposium on electron and photon interactions at high energies; Bonn, F.R. Germany; 27 Aug 1973; Published in summary form only.
; 1974; North-Holland Publishing Company; Amsterdam; 6. international symposium on electron and photon interactions at high energies; Bonn, F.R. Germany; 27 Aug 1973; Published in summary form only.
No abstract available
Journal
Verhandlungen der Deutschen Physikalischen Gesellschaft; ISSN 0420-0195; ; v. 16(6); p. 835-836
; v. 16(6); p. 835-836
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