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[en] Results of experiments to determine the effect of germanium content in single crystals of silicon-germanium solid solutions on the electrophysical, radiometric, and spectrometric characteristics of lithium drift detectors are presented. Surface and volume uniformity of the experimental semiconductor crystals was determined by measuring current, capacitance, noise, and spectrometric and radiometric parameters. Energy resolution and counting rates for beta particles as a function of external bias voltage at 300 K. The contribution of the variable parameters of the semiconductor detectors to the radiometric characteristics of silicon-germanium detectors was determined by establishing a correlation between electric, spectrometric, and radiometric parameters. Counting rates increased as germanium content increased, and it was determined that semiconductor structures with 2-6% germanium had the maximum structural uniformity in the presence of large-scale traps. For this optimal germanium content in lithium drift detectors, detection efficiencies were determined to be from 2.5 to 3 times higher than for silicon-lithium semiconductor detectors. 11 refs., 3 figs
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[en] Silicon transit nuclear-radiation detectors with a thin dead layer are becoming more widely used in modern applied spectrometry. However, in addition to their undoubted advantages, each of them has drawbacks due to the low ohmic properties and the stability of the parameters of the rear contact. The authors mean by the low ohmic properties of the contact the presence of injection from the contact of minority charge carriers which gives rise to a spontaneous increase in the reverse currents, the noise, and the energy resolution of the surface-barrier detectors at bias voltages below the operational value. In this paper the authors propose silicon surface-barrier detectors of two kinds with a thin dead layer of the entrance and exit windows, which differ from the analogs by the stability of the parameters of the rear contacts
Journal
[en] Silicon surface-barrier detectors (SBD) to two types with thin dead layers of inlet and outlet windows differing from analogous detectors by parameter stability of rear contacts are proposed. The current, noise and radiometric characteristics are optimized by irradiation of rear contacts by electrons with energy of 40-60 keV and radiation dose of 1015-1016 cm2 after the contacts vacuum spray-coating. The quality and stability of the SBD parameters are evaluated by measuring dynamic volt-ampere, volt-noise and radiometric characteristics
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