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[en] The formation of TiSi2 under ion irradiation at various temperatures and ion energies has been investigated. At substrate temperatures exceeding 300OC polycrystalline disilicide with smooth surfaces has been obtained. Optimal mixing efficiency was achieved by adjusting the ion energy to those values that the generated damage distribution drops rapidly beyond the Ti/Si interface
Journal
[en] We have developed a method for fabricating epitaxial CoSi2 nanowires using only conventional optical lithography and standard silicon processing steps. This method was successfully applied to ultrathin epitaxial CoSi2 layers grown on Si(100) and silicon-on-insulator substrates. A nitride mask induces a stress field near its edges into the CoSi2/Si heterostructure and leads to the separation of the CoSi2 layer in this region during a rapid thermal oxidation step. A subsequent etching step and a second oxidation generate highly homogenous silicide wires with dimensions down to 50 nm. Copyright 2001 American Institute of Physics
Journal
Applied Physics Letters; ISSN 0003-6951; 
; v. 79(6); p. 824-826
; v. 79(6); p. 824-826
[en] Doppler broadening measurements have been performed on Cu samples containing vacancies and/or hydrogen. Trapping of hydrogen by vacancies is indicated above about 150 K. Vacancies occupied by hydrogen show a strongly reduced positron-trapping probability as compared to hydrogen-free vacancies. Detrapping of hydrogen is not observed below 450 K. Therefore, the vacancy-hydrogen binding energy must be greater than 0.4 eV. The positron measurements also show that quenched-in vacancies become mobile at about 273 K and form clusters. The close analogy to the annealing behaviour of electron-irradiated Cu confirms the interpretation of annealing stage III by single-vacancy migration. (author)
Journal
Journal of Physics. F, Metal Physics; ISSN 0305-4608; ; v. 8(8); p. 1691-1698
; v. 8(8); p. 1691-1698
[en] Lattice strain within epitaxial multilayered structures has been investigated by MeV He backscattering. The technique has been applied to two very different systems, the metallic superlattice W/Mo and the magnetic insulator EuS/SrS. The W/Mo samples were prepared by UHV evaporation and the EuS/SrS layers by molecular beam epitaxy. The tetragonal distortions of the lattices are determined from backscattering angular yield curves of the individual layers, measured along inclined crystal orientations. Comparison of the experimental results with elastic model calculations provides the strain of the superlattice and allows the discrimination between coherent and incoherent superlattices
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