[en] Colour characteristic temperature dependence of such as X- and Y-coordinates (CIE 1931) for high power blue laser diode was investigated. It was shown, that thermal stability of colour characteristic of high power blue laser diode allows to create solid state lighting. (paper)

[en] The n-type and p-type a-GaN films were successfully grown on a r-sapphire substrate, according to X-ray diffractometer and SEM results parameters measurement. The growth rate versus the growth temperature was investigated. The holes concentration (8x10¹⁷ cm⁻³) was achieved by the Cp₂Mg flow optimization and the parameters of thermal annealing in nitrogen. The GaN film growth rate dependence versus temperature at a constant hydrogen flow through a TEG source was investigated. The results indicate that defects density is reduced upto 10⁴ cm⁻², the surface morphology uniformity was improved. During growth the influence from V/III flows ratio was detected. (paper)