[en] The structural analysis of the following compound was performed: Ga_1_3(enH_2)_1_,_5(OH)_2_4(NO_3)_1_8•(H_2O)_3_6 (R-3, a=b=19.993 (3); c=18.493 (4) Å; V=6401.7 (2) Å T=153(2)K, Z=3; D_c_o_m=2.48g/cm"3, μ(CuKα)=4.207mm"-"1). Its structural formula was established: ⎢Ga_1_3(μ-OH)_2_4(OH_2)_2_4⎥(enH_2)_1_,_5(NO_3)_1_8•12H_2O. The obtained 13-cyclic cation by its geometric dimensions can be related to nanoclusters. (author)

[en] We report on the growth mechanisms of germanium nitride nanowires on the surface of crystalline Ge annealed in hydrazine vapor at different temperatures. In spite of the presence of water (and hence oxygen precursors) in hydrazine, the pure germanium nitride single crystal nanowires were produced in the temperature range of 480-580 degree C. At temperatures below 520 degree C, the GeO_x clusters were formed first at the Ge surface, followed by the nucleation and growth of nanowires through the Vapor-Liquid-Solid mechanism. The Vapor-Solid growth mechanism was observed at temperatures exceeding 520 degree C, and Ge_3N_4 nanobelts were produced instead of nanowires with circular cross-sections. All nanostructures have the alpha germanium nitride structure; however, at the nucleation stage, the presence of beta Ge_3N_4 phase was also observed in the roots of nanowires.