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[en] This paper investigates performance characteristics of symmetric tungsten oxide film electrochemichromic cells. Bubble evolution is observed when electrons injected from an electrode reach the colored oxide film/electrolyte interface. Optimum design of oxide film thickness, surface active area, injected charge, and applied bias are addressed. The procedure to obtain the characteristics is explained

[en] Unconventional nature of superconducting state of PrOs₄Sb₁₂, Pr-based heavy-electron compound with the filled Skutterudite structure, is shown to be explained by taking into account a structure of the crystalline-electric-field level and of the Fermi surface determined by the band structure calculation. In particular, the anisotropic pairing with a full gap on the Fermi surface, suggested by the measurement of the NQR relaxation rates 1/T₁, is shown to be possible in the manifold of chiral 'p'- or 'd'-wave pairing, and to be compatible with the absence of the coherence peak and the pseudo-gap behavior of 1/T₁T far above the superconducting transition temperature

[en] Cu thin films as a seed layer were deposited on Si (1 0 0) substrates by applying a negative substrate bias voltage using a non-mass separated ion beam deposition method. Using resistivity measurement, X-ray diffraction analysis, atomic force microscopy, secondary ion mass spectroscopy, and scanning electron microscopy, the Cu films were characterized. The Cu films deposited at the substrate bias voltage of -50 V showed higher purity, strong (1 1 1) preferred orientation, smoother surface and better step coverage in comparison with the Cu films deposited without the substrate bias voltage. The thickness dependence of the resistivity showed clear size effects with decreasing the film thickness. In the case of Cu (100 nm)/Ta (50 nm)/Si structures, the Cu films deposited on Ta/Si substrates by applied the substrate bias voltage maintained a completely (1 1 1) preferred orientation without (2 0 0) texture even after thermal annealing at 450 deg. C for 60 min

[en] An origin of the anisotropic Copper pairing in heavy fermion superconductors is discussed on the basis of the interaction mediated by the antiferromagnetic spin-fluctuations which are observed in experiments. Such interaction promotes the anisotropic even-parity pairings but suppresses the odd-parity as well as the isotropic even-parity pairings. Transport properties at low temperatures are also discussed in relation to the gap structure of Cooper pair, which shows that different kinds of existing experiments can be explained by a gap vanishing along the line(s) on the Fermi surface. (orig.)

[en] Fundamental aspects of direct ion beam deposition (IBD) are discussed, stressing surface preparation and contamination problems. Residual gas contamination, ion beam induced metal contamination, and presence of surface native oxide before deposition are shown to be the major factors hindering low temperature epitaxial growth in IBD. A low energy hydrogen ion bombardment is demonstrated as an effective surface preparation method to remove surface native oxide in the case of silicon deposition

[en] It is shown that, at low temperature and high polarization, a spin-1/2 Fermi system becomes a mixture of a degenerate fluid (up spins) and a fluid described by Boltzmann statistics (down spins). The down spins become classical when the polarization is so high that their Fermi energy becomes much less than kT. For weakly interacting systems the coefficients of thermal conductivity, viscosity, and spin diffusion are computed by kinetic theory arguments and from the Boltzmann equation. Comparisons are made with coefficients of the fully degenerate systems at zero and high polarization; altered temperature and magnetic field dependences result

[en] The physical properties of Sb-doped SnO₂ thick films, prepared by a repeating chemical spray deposition method, have been investigated. The films 1000--14 000-A thick were deposited on fused quartz, borosilicate glass, and soda lime glass substrates at 600 ⁰C using an aqueous solution of a mixture of SnCl₄ and SbCl₃. The films prepared by the method are homogeneous, and the electrical resistivity of the films on fused quartz and borosilicate glass substrates were found to be independent of the film thickness, and are 9.5 x 10^-4 Ω cm, and 8.6 x 10^-4 Ω cm, respectively. The resistivity of the films thicker than 4000 A on soda lime glass substrates is almost constant, and is 1.8 x 10^-3 Ω cm, although a large increase in the resistivity of the thinner films was observed. The optical band gap of the films on fused quartz and borosilicate glass substrates is also independent of the film thickness, and is almost the same: 3.75 eV. But the band gap of the films on soda lime glass substrates depends on the film thickness, and increases from 2.85 to 3.08 eV with increasing thickness from 2250 to 13 000 A. The Hall mobility and carrier concentration of the films were also measured. The results of x-ray diffraction analysis and observations by SEM are described

[en] Epitaxial growth of germanium and silicon on Si(100) substrates by low energy mass-separated ion beam deposition is demonstrated. Heteroepitaxial germanium films are obtained by irradiating Ge⁺ ions with a kinetic energy of 100 eV onto a silicon substrate at a substrate temperature of 300⁰C. Homoepitaxial growth of silicon is possible at an ion energy of 200 eV and a substrate temperature of 740⁰C. The crystalline structure of these films is discussed in detail. (Auth.)

[en] Cu films were deposited on Si (1 0 0) substrates at room temperature by a non-mass separated ion beam deposition method. The effect of the negative substrate bias voltage on the property of the Cu films was investigated by using field emission scanning electron microscopy and secondary ion mass spectroscopy. The Cu film deposited at the negative bias voltage of -50 V showed an extremely fine and homogeneous morphology without a columnar structure. The purity of the Cu film deposited at the bias voltage of -50 V was much improved in comparison with the 6N Cu target, while the Cu film deposited without applying substrate bias voltage contained more impurities than the 6N Cu target