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[en] Semiconductor detectors for telescope systems designed for electron spectrometry in the 0.15-3.5 MeV range are described. The system consists of 5 different detecting modules of the dE/dx- and E-types. Monosilane p-type silicon with specific resistance of 7.6-12.0 kOhm x cm was used to fabricate the time-of-flight dE/dx detectors. Initial plate thickness is 400-500 μm, diameter is 22 mm. E-detectors are made according to a lithium-drift technology. Electrophysical and spectrometric characteristics of the detectors are investigated. Their volt-ampere characteristics have a plateau in a large range of bias voltage. Time-of-flight dE/dx-detectors undergo very strong electric fields the order of 106 V/m. Dumbbell-like in section structure increasing transition width decreases field strength on a surface preventing the possibility of arising the surface breakdown. Detector energy resolution is 16-18 keV
Journal
[en] Superhigh-sensitive high-speed detectors of ultrasoft X-ray for diagnostic of high-temperature plasma in controllable thermonuclear synthesis facilities have been developed. Technical characteristics of the detectors are the following: the registering range of quantum energy with 80% efficiency is 0.08-10 keV; thickness of gold electrode - no more than 10 nm; thickness of silicon dead layer - no more than 4 mkG/cm2; magnitude of dark currency at shift of 20 V - no more than 20 nA; diameter of sensing surface - up to 6 nm.(author)
Journal
Uzbekiston Fizika Zhurnali; ISSN 1025-8817; 
; v. 2(5-6); p. 418-423
; v. 2(5-6); p. 418-423
No abstract available
Source
Rossijskaya Akademiya Nauk, Moscow (Russian Federation); Ministerstvo Atomnoj Ehnergii Rossijskoj Federatsii, Moscow (Russian Federation); Ministerstvo Vysshego i Professional'nogo Obrazovaniya Rossijskoj Federatsii, Moscow (Russian Federation); Sankt-Peterburgskij Gosudarstvennyj Universitet, Sankt-Peterburg (Russian Federation); Peterburgskij Institut Yadernoj Fiziki im. B.P. Konstantinova RAN, Gatchina (Russian Federation); Radievyj Institut im. V.G. Khlopina, Sankt-Peterburg (Russian Federation); 566 p; ISBN 586-763-024-2; ; 2000; p. 368; International conference on nuclear physics. Clustering phenomena in nuclear physics. 50. Meeting on nuclear spectroscopy and nuclear structure; Sankt-Petersburg (Russian Federation); 14-17 Jun 2000
; 2000; p. 368; International conference on nuclear physics. Clustering phenomena in nuclear physics. 50. Meeting on nuclear spectroscopy and nuclear structure; Sankt-Petersburg (Russian Federation); 14-17 Jun 2000
No abstract available
Source
Rossijskaya Akademiya Nauk, Moscow (Russian Federation); Ministerstvo Atomnoj Ehnergii Rossijskoj Federatsii, Moscow (Russian Federation); Ministerstvo Vysshego i Professional'nogo Obrazovaniya Rossijskoj Federatsii, Moscow (Russian Federation); Sankt-Peterburgskij Gosudarstvennyj Universitet, Sankt-Peterburg (Russian Federation); Peterburgskij Institut Yadernoj Fiziki im. B.P. Konstantinova RAN, Gatchina (Russian Federation); Radievyj Institut im. V.G. Khlopina, Sankt-Peterburg (Russian Federation); 566 p; ISBN 586-763-024-2; ; 2000; p. 367; International conference on nuclear physics. Clustering phenomena in nuclear physics. 50. Meeting on nuclear spectroscopy and nuclear structure; Sankt-Petersburg (Russian Federation); 14-17 Jun 2000
; 2000; p. 367; International conference on nuclear physics. Clustering phenomena in nuclear physics. 50. Meeting on nuclear spectroscopy and nuclear structure; Sankt-Petersburg (Russian Federation); 14-17 Jun 2000
No abstract available
Source
Vlasnikov, A.K. (ed.); Rossijskaya Akademiya Nauk, Moscow (Russian Federation); Moskovskij Gosudarstvennyj Univ. im. M.V. Lomonosova, Moscow (Russian Federation); Nauchno-Issledovatel'skij Inst. Yadernoj Fiziki im. D.V. Skobel'tsyna, Moscow (Russian Federation); Sankt-Peterburgskij Gosudarstvennyj Univ., Sankt-Peterburg (Russian Federation); Nauchno-Issledovatel'skij Inst. Fiziki im. V.A. Foka, Sankt-Peterburg (Russian Federation); Ob''edinnenyj Inst. Yadernykh Issledovanij, Dubna (Russian Federation); 345 p; ISBN 5-98340-004-5; ; 2003; p. 279-280, 326; 53. International meeting on nuclear spectroscopy and nuclear structure (Nucleus-2003); 53. Mezhdunarodnoe soveshchanie po yadernoj spektroskopii i strukture atomnogo yadra (Yadro-2003); Moscow (Russian Federation); 7-10 Oct 2003
; 2003; p. 279-280, 326; 53. International meeting on nuclear spectroscopy and nuclear structure (Nucleus-2003); 53. Mezhdunarodnoe soveshchanie po yadernoj spektroskopii i strukture atomnogo yadra (Yadro-2003); Moscow (Russian Federation); 7-10 Oct 2003
[en] The authors describe new semiconductor detectors for telescope systems intended for electron spectrometry in the range 0.15-3.5 MeV. A cross section of a telescope consisting of five different semiconductor detecting modules is shown. In preparing the semiconductor detectors, the authors paid much attention to thru put dE/dx detectors. The electrophysical and spectrometric characteristics of semiconductor detectors are presented. The energy resolution for the better specimens was 16 keV for E detectors with respect to the 976-keV line of 207Bi beta-radiation and 18-keV for dE/dx detectors
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