No abstract available

[en] Simple enough and universal method of ion-beam alloying of metal materials with the use of pulsed laser-plasma ion source is considered. Examples of the method application to the study of structure formation of ion-doped alloys of immisible metal elements (Sn-Cr; Sn-Mo) and to the treatment so as to increase corrosion resistance of the structural materials are shown

No abstract available

No abstract available

No abstract available

[en] Distribution of impurities (N,O) and alloying elements (C,V) along the molybdenum samples, preliminary tested on tension at different temperatures, and welded annealed samples was studied using the energy mass analyzer with a laser ion source. Application of the laser mass spectroscopy method permitted to detect redistribution of impurities and alloying elements in molybdenym samples during the Welding and the following annealing. This redistribution may be a cause of changing mechanical properties. The analyzer block-diagram is presented

[en] Dynamics of silicide formation in the chromium-ion-implantated silicon system at second treatment is studied. Implanted and nonimplanted silicon with Si⁺ and Sb⁺ ions with 25 keV energy and 2x10¹⁵ cm^-2 and 6x10¹⁴ cm^-2 doses correspondingly is used as a substrate. The temperature of samples during treatment varies within 750-1000^degC limit depending the beam power. Investigation of silicon annealing quality, mass transfer character in the Cr-Si system is carried out by the methods of backscattering of He⁺ ions with 1.5 MeV enerfy channeling. Preliminarily implantation is shown to slow the process of silicide formation. 2 refs.; 2 figs

[en] System of ion focusing in a laser source with application of a single lens is calculated and studied in detail. Ions were accelerated in the uniform field in a gap between two parallel grids. The beam focusinng was accomplished usig the conical electrode. The second grid, conical electrode, and outlet diaphragm formed single lens, in the field of which ions were decelerated to 10 keV energy, and then accelerated again up to 24 keV. At total beam current of 10 mA the beam crossover is 1-2 mm. It is shown that the crossover size does not depend on total beam current, but is defined by the magnitude of phase volume and the system aberrations. The current density varies directly with the laser radiation focusing spot square

[en] A comparative analysis is made of the structure of metastable alloys formed by ion implantation and nanosecond laser alloying, using as an example a system of elements which do not mix in equilibrium conditions in the liquid phase, namely Sn-Cr. (Author)

[en] Powerful ion pulses are shown to cause creation of defects in single silicon crystals. RBS measurements demonstrated that the width of defects distribution is much larger than distribution of implanted atoms. There has been noticeable annealing of defects in crystals by the action of ion pulses and migration of the single defects in crystal channels. (author)