[en] We have measured the deposition of potential energy of slow (∼6x10⁵ m /s) , highly charged ions in solids with an ion implanted silicon detector. A large fraction (about 35% or 60 keV) of the potential energy dissipated by Au⁶⁹⁺ ions can be traced in electronic excitations deep (>50 nm) inside the solid. In contrast, only about 10% of the potential energy has been accounted for in measurements of emitted secondary particles. (c) 1999 The American Physical Society

[en] Electronic sputtering in the interaction of slow (v< v_Bohr), highly charged ions (SHCI) with solid surfaces have been subject of controversial discussions for almost 20 years. We review results from recent studies of total sputtering yields and discuss distinct microscopic mechanisms (such as defect mediated desorption, Coulomb explosions and effects of intense electronic excitation) in the response of insulators and semiconductors to the impact of SHCI. We then describe an application of ions like Xe⁴⁴⁺ and Au⁶⁹⁺ as projectiles in time-of-flight secondary ion mass spectrometry for surface characterization of semiconductors