AbstractAbstract
No abstract available
Original Title
Geteroehpitaksial'nye sloi nitrida niobiya na sapfire
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Short note; for English translation see the journal Soviet Physics - Crystallography (USA).
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Journal Article
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Kristallografiya; ISSN 0023-4761; ; v. 25(4); p. 878-880
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AbstractAbstract
No abstract available
Original Title
Nekotorye osobennosti tunnel'nykh kontaktov na osnove plenok nitrida niobiya
Source
Short note. For English translation see the journal Soviet Technical Physics Letters (USA).
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Journal Article
Journal
Pis'ma v Zhurnal Tekhnicheskoj Fiziki; v. 10(6); p. 374-376
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AbstractAbstract
No abstract available
Original Title
Geteroehpitaksiya nitrida tantala na sapfire
Primary Subject
Source
Short note. For English translation see the journal Soviet Physics - Crystallography (USA).
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Journal Article
Journal
Kristallografiya; ISSN 0023-4761; ; v. 27(6); p. 1204-1206
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AbstractAbstract
[en] The experimental investigation of the energy gap in the excitation spectrum of ZrN superconducting film in ZrN-I-Pb tunnel junctions is performed. For 1.9 K temperature the energy gap value equal to 0.97 Mev is obtained. It is shown that the critical temperature dependence of superconducting transition for investigated films can be described in the framework of the microscopic theory of proximity effect with parameter γm 0.23
Original Title
O velichine ehnergeticheskoj shcheli nitrida tsirkoniya i ehffekte blizosti v tunnel'nykh strukturakh ZrN-I-Pb
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For English translation see the journal Soviet Physics - Solid State (USA).
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AbstractAbstract
[en] Superconducting properties, pinning and electric resistance of zirconium nitride films with the thickness d=23-240 nm, which are produced on different substrates at Ts=450-1000 deg C, are investigated. Evaluation of λd, ξd, electron effective mass and Fermi rate parameters is made for the studied films
Original Title
Sverkhprovodyashchie svojstva plenok nitrida tsirkoniya
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Journal Article
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AbstractAbstract
[en] A study of tunneling contacts made from films of niobium nitride with upper electrodes consisting of lead and niobium films, in which tunneling barriers were produced by thermal oxidation of the base electrodes is reported
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Source
Cover-to-cover translation of Pis'ma v Zhurnal Tekhnicheskoj Fiziki (USSR).
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Journal Article
Journal
Soviet Technical Physics Letters; ISSN 0360-120X; ; v. 10(3); p. 157-158
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Shaternik, V.E.; Noskov, V.L.; Chubatyy, V.V.; Larkin, S.Yu.; Sizontov, V.M.; Miroshnikov, A.M.; Karmazin, A.A.
Abstracts of fifth international conference 'Magnetic and superconducting materials'2007
Abstracts of fifth international conference 'Magnetic and superconducting materials'2007
AbstractAbstract
[en] Full text: Perspective [1] Josephson Mo-Re alloy-oxide-Pb, Mo-Re alloy-normal metal-oxide-Pb and Mo-Re alloy-normal metal-oxide- normal metal-Mo-Re alloy junctions have been fabricated and investigated. Thin (∼50-100 nm) MoRe superconducting films are deposited on Al2O3 substrates by using a dc magnetron sputtering of MoRe target. Normal metal (Sn, Al) thin films are deposited on the MoRe films surfaces by thermal evaporation of metals in vacuum and oxidized to fabricate junctions oxide barriers. Quasiparticle I-V curves of the fabricated junctions were measured in wide range of voltages. To investigate a transparency spread for the fabricated junctions barriers the computer simulation of the measured quasiparticle I-V curves have been done in framework of the model of multiple Andreev reflections in double-barrier junction interfaces. It's demonstrated the investigated junctions can be described as highly asymmetric double-barrier Josephson junctions with great difference between the two barrier transparencies [2,3]. The result of the comparison of experimental quasiparticle I-V curves and calculated ones is proposed and discussed. Results of computer simulation of quasiparticles I-V curves of NbN-based junctions are presented and discussed. Also I-V curves of the fabricated junctions have been measured under microwave irradiation with 60 GHz frequency , clear Shapiro steps in the measured I-V curves were observed and discussed. (authors)
Primary Subject
Source
Lutpullaev, S.; Akhavan, M.; Saxena, S.S. (eds.); Uzbekistan academy of sciences, Tashkent(Uzbekistan); Univ. of Cambridge, United Kingdom (United Kingdom); Hokimiyat of Urgench region, Urgench (Uzbekistan); Khorezm Mamun academy, Khorezm (Uzbekistan); Urgench state univ., Urgench (Uzbekistan); Physical tech. inst., Tashkent (Uzbekistan); Sharif univ. of technology, Iran (Iran, Islamic Republic of); Cambridge central Asia forum, (United Kingdom); 114 p; Sep 2007; p. 25; 5. international conference on Magnetic and superconducting materials; Khiva (Uzbekistan); 25-30 Sep 2007; 3 refs.
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Miscellaneous
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Golyshev, N.V.; Rogachevsky, B.M.; Motorin, S.V.; Zelenkevich, R.L.; Noskov, V.L.; Komashko, V.A.
Applied superconductivity. Vol. 2. Papers1993
Applied superconductivity. Vol. 2. Papers1993
AbstractAbstract
[en] Squids are the principal unit of superconducting (SC) measuring devices which determines the metrological characteristics of these devices. Among various types of squids, Nb-AlxOy-Nb tunnel junction dc squids have a very low level of intrinsic noise (below 10-6 Φ0/√(Hz)) However, NbN dc squids are also interest. This fact is stipulated by the wish to have dc squids which are stable to thermal cycling, humidity and electrostatic charges. The intrinsic noise of NbN dc squids is appreciably higher than that of Nb dc squids. For example, white noise of NbN-MgO-NbN dc squids studied in detail in was about 10-6 Φ/√(Hz) with the beginning 1/f noise near 100 Hz. The present report is about the creation and study of noise of one more variant of NbN dc squids, those with NbN-Nb2O5-Nb tunnel junctions. (orig.)
Secondary Subject
Source
Freyhardt, H.C. (ed.); 781 p; ISBN 3-88355-197-X; ; 1993; p. 1311-1312; DGM Informationsges. Verl; Oberursel (Germany); European conference on applied superconductivity (EUCAS); Goettingen (Germany); 4-8 Oct 1993
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Book
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Conference
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CHALCOGENIDES, ELECTRIC CONDUCTIVITY, ELECTRICAL PROPERTIES, ELECTRONIC EQUIPMENT, ELEMENTS, EQUIPMENT, FLUXMETERS, MEASURING INSTRUMENTS, METALS, MICROWAVE EQUIPMENT, MOISTURE, NIOBIUM COMPOUNDS, NITRIDES, NITROGEN COMPOUNDS, OXIDES, OXYGEN COMPOUNDS, PHYSICAL PROPERTIES, PNICTIDES, SEMICONDUCTOR DEVICES, SEMICONDUCTOR DIODES, SEMICONDUCTOR JUNCTIONS, THERMODYNAMIC PROPERTIES, TRANSITION ELEMENT COMPOUNDS, TRANSITION ELEMENTS, VARIATIONS
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