[en] The authors proposed a high-k NdO_xN_y gate dielectric grown on silicon substrate by reactive rf sputtering. It is found that the NdO_xN_y gate dielectric after annealing at 700 deg. C exhibits excellent electrical properties such as high capacitance value, small interface state, low leakage current, and almost no hysteresis in the capacitance-voltage curves. This indicates that annealing at 700 deg. C treatment can suppress the interfacial layer and silicate formation, reduce interface traps, and anneal out defects

[en] The authors report on the structural and electrical characteristics of high-k erbium titanium oxide (Er₂TiO₅) gate dielectrics deposited on Si (100) substrates by reactive rf sputtering. They find that the capacitance value of Er₂TiO₅ gate dielectric annealed at 700 deg. C is higher compared to other annealing temperatures and exhibits a lower hysteresis voltage as well as interface trap density in C-V curves. This dielectric also shows almost negligible charge trapping under high constant voltage stress. This phenomenon is attributed to an amorphous Er₂TiO₅ structure and the suppression of the interfacial layer and Er silicate observed from x-ray diffraction and x-ray photoelectron spectroscopy, respectively

[en] This paper describes the structure and electrical properties of thin NdO_xN_y gate dielectrics deposited on Si(100) substrates through reactive rf sputtering. Atomic force microscopy and x-ray photoelectron spectroscopy were used to study the morphological and chemical features of these films as functions of the growth conditions (argon-to-nitrogen flow ratios of 20/5, 15/10, 10/15, and 5/20; temperatures ranging from 600 to 800 deg. C). The NdO_xN_y gate dielectric prepared under an Ar/N₂ flow ratio of 10/15 with subsequent annealing at 700 deg. C exhibited the smallest capacitance equivalent thickness and the best electrical characteristics (gate leakage current, interface-trapped charge, and hysteresis voltage in the capacitance-voltage curves). We attribute this behavior to the optimal nitrogen content in this metal oxide film suppressing the amorphous silica and silicate at the NdO_xN_y/Si interface and forming a smooth surface

[en] A high-k erbium oxide thin film was grown on silicon substrate by reactive rf sputtering. It is found that the capacitance value of Er₂O₃ gate dielectric with TaN metal gate annealed at 700 deg. C is higher compared to other annealing temperature and exhibits a lower hysteresis voltage as well as interface trap density in C-V curves. They also show negligible charge trapping under high constant voltage stress. This phenomenon is attributed to a rather well-crystallized Er₂O₃ and the decrease of the interfacial layer and Er silicate thickness observed by x-ray diffraction and x-ray photoelectron spectroscopy, respectively

[en] We investigated on the structural properties of Al₂O₃ dielectrics grown on TiN metal substrates using an atomic layer deposition technique with tri-methyl-aluminum and either O₃ or H₂O as the precursor and oxidant, respectively. The structural and morphological features of these films were examined by atomic force microscopy, X-ray diffraction, and X-ray photoelectron spectroscopy measurements. We find that Al₂O₃ dielectric films with the O₃ oxidant exhibit a rough morphology, a thick TiO₂ film, and a small amount of contaminants such as carbon and hydrogen. The reason for the rapid diffusion of oxygen atoms into the TiN lattice leads to the formation of TiO₂ layer on the TiN substrate. This is due to the higher oxidation potential of the O₃ compared to the H₂O.