[en] Microwave discharges (2.45 GHz) have been generated in C₆₀-containing Ar produced by flowing Ar over fullerene-containing soot. Optical spectroscopy shows that the spectrum is dominated by the d³Πg-a³Πu Swan bands of C₂ and particularly the Δv = -2, -1, 0, +1, and +2 sequences. These results give direct evidence that C₂ is one of the products of C₆₀ fragmentation brought about, at least in part, by collisionally induced dissociation (CID). C₆₀ has been used as a precursor in a plasma-enhanced chemical vapor deposition (PECVD) experiment to grow diamond-thin films. The films, grown in an Ar/H₂ gas mixture (0.14% carbon content, 100 Torr, 20 sccm Ar, 4 sccm H₂, 1500 W, 850 degree C substrate temperature), were characterized with SEM, XRD, and Raman spectroscopy. Growth rate was found to be ∼ 0.6 μ/hr. Assuming a linear dependence on carbon concentration, a growth rate at least six times higher than commonly observed using methane as a precursor, would be predicted at a carbon content of 1% based on C₆₀. Energetic and mechanistic arguments are advanced to rationalize this result based on C₂ as the growth species

[en] The method of ion assisted vapour deposition (IAD or IVD) for preparing thin films is described. The comparison of the Ag/Si thin film prepared by IVD with those prepared by conventional vacuum vapour deposition has been made. The interface ion mixing of Ag/Si, and the surface microstructure of the Ag/Si thin films are measured by RBS, TEM, SEM etc

[en] The Al and Ag films made by IVD were significantly modified in both mechanical and electrical properties. The cause lies in the deposition parameters: bombardment energy and ion/atom arrival rate ratio. It was found that the Al film hardness, the Al-Si contact resistivity and the Al-Si adhesion were improved in the deposition range: energy 250-500 eV and arrival ratio 0.06-0.10. (author)

[en] Low-energy H₂⁺ ions were implanted into polysilicon solar cells to passivate the electrically active centers which existed in grains and grain boundaries. The illuminative and dark characteristics of solar cells were significantly improved. Measurements of the optical properties of monosilicon samples showed that the refractive index n was decreased after H₂⁺ bombardment, and the value of the optical band gap E_g was increased from 1.1 eV of monosilicon to 1.3 eV. A thermal stability test was performed after hydrogenation. The refractive index n of hydrogenated samples rose again after annealing above 300degC, but the absorption coefficient α did not change significantly, even after annealing at 900degC for 30 min. (orig.)