[en] At high dopant concentrations a temperature-dependent, limited electrical activation is observed. Corresponding experimental results obtained by incoherent light-pulse annealing with pulse durations of 10 ms and several seconds as well as by different combinations of light pulse treatment with long time annealing at temperatures between 600 and 900 ⁰C of As-, P- and B-implanted silicon are compared. The observed electrical activation is not only a function of annealing temperature and dopant concentration. Effects like non-equilibrium states due to short annealing times and the present defect structure formed by foregoing processes (implantation or other annealing steps) play an important role. Annealing with 10 ms light pulses after implantation of 5 x 10¹⁵ As/cm² (100 keV) leads to activation far above the equilibrium value corresponding to the maximum temperature during the pulse. Low temperature annealing (800 ⁰C, 30 min) of boron-implanted silicon after foregoing flash lamp treatment results in an essentially higher charge carrier concentration compared with an analogous tempering of an as-implanted sample. The results are discussed using different models of the formation of electrically inactive dopant complexes or dopant precipitations, respectively. (author)

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[en] Short note

No abstract available

[en] Boron-implanted <100> Si (dose 1 x 10¹² up to 5 x 10¹⁶ B/cm², E/sub impl/ = 50 keV) is annealed by flash-lamp pulses of 10 ms duration. The dependence of sheet resistance, electrical activation, and charge carrier mobility on implanted dose and energy density of the flash is investigated. The influence of an electrical solubility limit and of lattice disturbances are discussed. (author)

[en] Short communication. 1 ref

[en] A buried layer of iron silicide has been formed by high dose implantation of Fe into (100) silicon and subsequent annealing. Beside the main component FeSi₂ an admixture of FeSi has been observed in the whole investigated dose range from 2 to 5 x 10¹⁷ Fe/cm^-2. The formation of FeSi can be avoided by enhancing the implantation temperature from 350 to 600degC. The transition of FeSi₂ from the β to the α phase and vice verca due to annealing above or below the transition temperature of 967degC has been studied by RBS, X-ray diffraction, IR spectroscopy and resistivity measurements. The corresponding change in the iron distribution and the change of the FeSi fraction due to the phase transformation are discussed. (author)

[en] Arsenic-implanted <100> Si (dose 1x10₁₂ up to 5x10₁₆ As/cm₂, 100 keV) is annealed by flash lamp pulses of 10 ms duration. The irradiation results in maximum sample temperatures at the pulse end between 750 and 1350 ₀C. The dependence of sheet resistance, electrical activation, and charge carrier mobility on implanted dose and annealing conditions is showm. The diffusional broadening of the implanted profile due to the pulse heating is also investigated. Special features of the annealing behaviour of very high implantation doses are discussed. (author)

No abstract available