[en] Investigation results of stable radiation defect formation in the base of silicon p-n structures under α-particle irradiation are presented. Investigated are the carrier life behaviour, distribution profile of electric active centres by the depth of the base, parameters of the formed defects under irradiation of p-n structures both on the part of the emitter and of the base. It is shown that the energy spectrum of defects, profile change of active centres and life time of carriers are different at the given radiation methods with Esub(s)-(0.1+-0.04) eV level. The primary radiation defects are shown to migrate at the distance not smaller than 400 μm. Internode silicon atoms are supposed to participate in defect formation

[en] Effect is studied of nitriding a silicon-dielectric structure in the process of MIS structure fabrication on the distribution of electrically active centers in the silicon subsurface region, generation lifetime of charge carriers, surface states density and their variation under ⁶⁰Co gamma-quanta irradiation. Influence is investigated of the silicon production technology on the electrophysical properties of dielectric-semiconductor interface and their variation under irradiation. It is established that nitrogen saturation of a silicon-dielectric interface does not deteriorate its electrophysical properties

[en] The work was undertaken to determine the rial distribution in silicon of defects stable at 300 K following irradiation by alpha particles from a ²¹⁰Po radioisotope source (E=-4.7 MeV). The particle range R approximately 200 μm. The study covered the distribution of the rate of carrier spacing over the base range depth of p-n structures and changes in lifetimes of the minority charge carriers (MCC). The p-n junctions were obtained by the method of diffusion at 1100 deg C through a depth of 2 to 3 and 5 to 6 μm. To measure the concentration profile of the majorjty charge carriers in the base range the second harmonic method has been used. The lifetime of the MCC was measured from the transient characteristics. The analysis of the obtained results on studyiOg the distribution of the rate of charge carrier spacing oVer the base range depth and on radiation-indUced changes in the MCC lifetime has shown that irradiation of silicon by an rencollimated alpha-particle beam results in practically homogeneous introduction of radiation defects (RD), stable at 300 K in the 0.1<=x/R<=0.8 range. The vacancy diffusion lenght determined as Lsub(V)<1.1 μm, cannot be a determining factor for homogeneous distribution of RD, in the range being considered

[en] Effect of strong electric field (E > 10³ V/cm) and of temperature on the efficiency of defect formation and stability within p-Si under alpha-particle irradiation is studied. The processes of radiation defect formation in strong electric field and beyond it are shown to be essentially different. Irradiation within the field results in decrease of introduction efficiency of E_v + 0.18, E_v + 0.21 eV level defects, while E_v + 0.13 eV level defects belonging to the vacancy are not actually observed

[en] The investigation of electric field effect of up to 10⁵ V/cm electric intensity on formation and spatial distribution of radiation defects (RD) in the base region of silicon n⁺-p-structures is carried out. The structures are prepared by phosphorus diffusion into the depth of 2-3 μm into p-silicon doped with boron (psub(0)=(1.5-2.0)x10sup(15) cm^-3). The samples have been irradiated at 296 K on the side of n⁺ region by alpha-particles of isotopic source sup(210)Psub(0) (Esub(α)=4.7 MeV), the length of the path of which in silicon constitutes 20 μm. The investigation of effect of charge carriers injection on formed PD stability is performed. It has been found the injection of non-basic carriers at 296 K results in annealing of PD implanted outside the strong electric field region, while defects concentration in the strong field region remains unchangeable. The presented experimental results show that strong electric fields with E>10³ V/cm substantially decrease the velo-- city of formation of some stable radiation defects in p-silicon

[en] A study was made of the stability and changes in the radiation defects with energy levels at E_c - 0.14, E_v + 0.29, E_v + 0.35, and E_v + 0.38 eV in p-type silicon subjected to carrier injection, electric fields, and thermal treatments. Dissociation of an injection-annealed defect with the energy level at E_c - 0.14 eV, formed at the high rate of generation of primary defects, increased the concentration of interstitial carbon (E_v + 0.29 eV) consumed during annealing in the formation of C_i-O_i or C_i-O_s complexes with a level at E_v + 0.38 eV. Heating altered the configuration of the latter complexes and gave rise to an energy level at E_v + 0.35 eV. The injection-annealed defect was postulated to be a double or a split silicon interstice or an Si_i-C_i complex

No abstract available

No abstract available

[en] Rearrangement and stability of radiation-induced defects with E_c-0.14, E_v+0.29, E_v+0.35 and E_v+0.38 eV energy levels in p-silicon under injection, electrofield and thermal effects are studied. It is shown that dissociation of injection-annealing defect with E_c-0.14 eV energy level, forming under high generation rate of primary defects results in increase of concentration of interstitial carbon (E_v+0.29 eV), which under thermal annealing participates in production of C_i-O_i or C_i-O_s complexes with E_v+0.38 eV level. The latter under further heating changes configuration and gives E_v+0.35 eV energy level. It is supposed that injection-annealing defect is either binary or splitted interstitial site of silicon or Si_i-C_i complex

[en] Capacitance methods were used in a study of defect formation in silicon and at the Si-SiO₂ interface as a result of irradiation with ²⁵²Cf fission fragments. The distribution of defects with depth in a sample had two peaks corresponding to the ranges of light and heavy fragments. The kinetics of formation of the main radiation defects in n- and p-type silicon was determined and their parameters were found. The spectrum of radiation defects created by fission fragments was practically identical with the spectrum of defects generated by other types of radiation. A study was made of the thermal stability of the resultant defects. The relationships governing the changes in the electrophysical properties of silicon caused by irradiation with fission fragments could be described only if the authors allowed for the localization of defects in clustered regions. An analysis of the experimental data made it possible to find the parameters of such regions: the size of the core of a cluster was ∼1,300-1,400 angstrom, the number of defects was ∼ 10⁴-19⁵, and the efficiency of generation of such clusters was ∼10³-10⁴ cm^-1