[en] Short note

No abstract available

[en] A new method to determine the depth distributions of implanted ions and recoil target atoms in amorphous targets is developed. Our procedure is based on the direct numerical solution of one-dimensional linearized Boltzmann transport equations for the scalar fluxes of the ions and the recoils. We consider characteristic examples of ion implantation into homogeneous and layered targets. The profiles calculated by the new method are compared with range distributions obtained from TRIM Monte Carlo simulations. Our program BOTE is up to two orders of magnitude faster than the TRIM calculations. (author)

[en] The concepts of the linear cascade theory and its application to inhomogeneous targets (layered structures, mask windows, and deep trenches) are shortly reviewed. To calculate range and energy deposition distributions there exist two different levels of the theoretical description: (i) Using the static BCA Monte Carlo simulations or the linearized Boltzmann transport equations (LBTE) the profiles can be determined for a given inhomogeneous structure. (ii) The profiles of the incident ion in the homogeneous components of the inhomogeneous target are assumed to be known. Then, an appropriate combination of these distributions leads to the profile in the inhomogeneous target. (author)

[en] A characteristic feature of implantation into deep trenches is the grazing incidence bombardment of the trench sidewalls. This leads to a considerable backscattering of the incoming ions. Most of the backscattered particles are reimplanted into the opposite sidewalls of the trench. For grazing incidence implantation of As⁺ ions into Si we determine the backscattering yield and energy and angular distributions of the reflected ions using TRIM Monte Carlo simulations. Our investigations may be considered a first step in a semi-analytical calculation of the dopant profiles in the trench. Therefore, we fit the histograms obtained for the energy and directional distributions of the backscattered ions to analytical expressions. (author)

[en] The available experimental range and range profiles are compared with theoretical predictions based on different models for the electronic stopping cross-section. Implantation energies from 0.1 to 10 MeV are considered. In the entire energy range, the best agreement between the experimental data and the calculations is achieved for a combination of the Lindhard-Scharff and the Bethe-Block electronic stopping formulae using the empirical parameter C_k = 1.2. (author)

[en] The influence of the energy transport by the recoils on the energy-loss and damage profiles is investigated. The well-established TRIM computer simulation scheme is applied to the implantation of P⁺ and As⁺ ions into silicon and to the implantation of Ar⁺ and Ga⁺ ions into Si₃N₄ and PMMA at ion energies of 100 keV. The results with and without simulating the recoil motion are compared. In the case of heavy ions incident on relatively light targets a considerable influence of the energy transport by the recoils is found. (author)

[en] Classical molecular dynamics (MD) simulations are performed to investigate elementary ion-beam-induced defect production in 3C- and 4H-SiC. A modified Tersoff potential is used to model the interactions between the atoms. For cases where the C and Si primary knockon atoms (PKAs) start parallel or antiparallel to the [0 0 0 1] direction, the threshold PKA energy for defect formation as well as the final defect configuration and its formation energy are determined. The elementary defects observed in 3C-SiC and 4H-SiC differ significantly whereas the corresponding threshold PKA energies and the formation energies of the configurations are mostly similar. In 4H-SiC new sites for C and Si interstitials are found: one site is situated between two C₃Si₃ hexagonal rings, the other between a C₃ and an Si₃ trigonal ring

[en] Short communication

[en] The main physical inputs and some practical applications of several Monte Carlo codes which have been developed in the last decade are shortly reviewed. (author)