[en] Attenuated total reflection (ATR) spectroscopy and spectroscopic ellipsometry (SE) have been used to characterize oxides used for the scanning capacitance microscopy (SCM) technique. SCM has been used to study boron and phosphorous doped Si test structures epitaxially grown on (100) Si substrates. SCM samples have one-dimensional (1D) doping profiles with sub-micron features, with staircase-like steps in the unipolar sample and a smoother profile in the bipolar sample, as obtained by secondary ion mass spectrometry (SIMS) profiling. Cross-sectional SCM results obtained on samples oxidized by the standard low-temperature UV-ozone method are presented, discussed and compared to results obtained on cleaved samples oxidized by a simple exposure to air. The results show that the native oxide covering a (110) cleaved section may yield SCM images of sufficient quality, with no contrast reversal on a wide range of doping levels, as well as observed on sections prepared with the UV-ozone technique. However, the long-term stability of the SCM signal on native oxides is poor, and UV-ozone oxidation can be used to recover a valid SCM signal. Realistic ultrathin oxide thickness data obtained by SE on (110) substrates are presented together with ATR results, which confirm the superior quality of UV-ozone oxides with respect to other kinds of oxides

[en] Interests in infrared spectroscopy (IRS) have been stimulated by the increasing need for non-destructive surface characterization providing structural and chemical informations about the new materials used in microelectronic devices. Standard infrared spectroscopy of thin layers is limited because of its lack of sensitivity. The use of optical configurations such as the attenuated total reflection (ATR) allows to characterize nanometric layers. This paper will present the results of a study conducted for a better understanding of the capabilities and limitations of this technique. A theoretical analysis based on a perturbation method is used to elucidate the results of ATR measurements performed on silicon oxide layers of different thickness on silicon substrates. This analysis shows that the absorbance ATR spectrum in p polarization is the image of the layer energy loss function, under specific conditions. The exact ATR spectrum simulation using a matrix formalism showed that the straightforward interpretation in terms of the layer dielectric function is limited to a very narrow layer thickness range. The fitting process of the ATR spectrum is evaluated for the interpretation of experimental spectra obtained for the growth of chemical silicon oxide layers

[en] The down scaling of complementary metal oxide semiconductor transistors requires materials such as porous low-k dielectrics for advanced interconnects to reduce resistance-capacitance delay. After the deposition of the matrix and a sacrificial organic phase (porogen), postcuring treatments may be used to create porosity by evaporation of the porogen. In this paper, Auger electron spectroscopy is performed to simultaneously modify the material (e-beam cure) and measure the corresponding changes in structure and chemical composition. X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy measurements in attenuated total reflection mode confirm the Auger results. The porogen removal and matrix cross-linking result in the formation of a Si-O-Si network under e-beam or ultra violet cure. The possible degradation of these materials, even after cure, is mainly due the presence of Si-C bonds

[en] The combined information of complementary physical analysis techniques is applied to obtain a full characterisation of the important material parameters of new high-k layers, i.e. the layer thickness, density, composition and interlayer thickness and nature, and to optimise the measurement methodologies of the different techniques

[en] Si/Si_(1−x−y)Ge_xC_y superlattices are used in the construction of new microelectronic architectures such as multichannel transistors. The introduction of carbon in SiGe allows for compensation of the strain and to avoid plastic relaxation. However, the formation of incoherent β-SiC clusters during annealing limits the processability of SiGeC. This precipitation leads to a modification of the strain in the alloy due to the reduction of the substitutional carbon content. Here, we investigated the strain in annealed Si/Si_0.744Ge_0.244C_0.012 superlattices grown by reduced pressure chemical vapour deposition using dark-field electron holography. The variation of the substitutional C content was calculated by correlating the results with finite-element simulations. The obtained values were then compared with Fourier-transformed infrared spectrometry measurements. It was shown that after annealing for 2 min at 1050 °C carbon no longer has any influence on strain in the superlattice, which behaves like pure SiGe. However, a significant proportion of substitutional C atoms remain in a third-nearest neighbour (3nn) configuration. It was deduced that the influence of 3nn C on strain is negligible and that only isolated atoms have a significant contribution. It was also proposed that the 3nn configuration is an intermediary step during the formation of SiC clusters

[en] Organic contamination adsorbed on 200 mm silicon wafers was characterized using various analytical techniques. Surface hydrophobicity, apparent optical thickness and electrical surface charge are used to characterize the silicon surface state. They only give information on total organic contamination. MIR-FTIR is very sensitive for detecting CH₂ and CH₃ contained in organics on silicon wafers. TOF-SIMS is quite sensitive and enables some of the organics to be recognized by identifying the molecule fragments. TDGC-MS is the most relevant technique to identify organic contamination on silicon wafers as extensive identification libraries exist

[en] Si/SiGeC superlattices are used in the construction of new generation devices such as multichannel transistors. The incorporation of C in the SiGe layers allows for a better control of the strain and the Ge content. However the formation of β-SiC clusters during annealing at high temperature limits the thermal stability of the alloy. It leads to a strong modification of the strain due to the reduction of the substitutional carbon content. Here, we investigated the behavior of Si/SiGeC superlattices that have been annealed using different characterization techniques: dark-field electron holography for the evaluation of strain; infrared spectroscopy and ToF-SIMS for the determination of the composition. It was found that after annealing at 1050 deg. C, the reduction of the substitutional C proportion leads to a recovery of the perpendicular strain in the superlattice. It was also proposed that the local arrangement of C atoms in a third nearest neighbor configuration is an intermediary step during the formation of the SiC clusters.

[en] We report on the electrical, optical and photoluminescence properties of industry-ready Al doped ZnO thin films grown by physical vapor deposition, and their evolution after annealing under vacuum. Doping ZnO with Al atoms increases the carrier density but also favors the formation of Zn vacancies, thereby inducing a saturation of the conductivity mechanism at high aluminum content. The electrical and optical properties of these thin layered materials are both improved by annealing process which creates oxygen vacancies that releases charge carriers thus improving the conductivity. This study underlines the effect of the formation of extrinsic and intrinsic defects in Al doped ZnO compound during the fabrication process. The quality and the optoelectronic response of the produced films are increased (up to 1.52 $\mathrm{m}\mathrm{\Omega <!--\; ??\; -->}\cdot <!--\; ???\; -->\mathrm{c}\mathrm{m}$ and 3.73 eV) and consistent with the industrial device requirements. (paper)

[en] We report here for the first time the combination of x-ray synchrotron light and a micro-electro-mechanical system (MEMS). We show how it is possible to modulate in real time a MEMS mass distribution to induce a nanometric and tunable mechanical oscillation. The quantitative experimental demonstration we present here uses periodic thermal dilatation of a Ge microcrystal attached to a Si microlever, induced by controlled absorption of an intensity modulated x-ray microbeam. The mechanism proposed can be envisaged either for the detection of small heat flux or for the actuation of a mechanical system.

[en] A multi-microscopy investigation of a GaN tunnel junction (TJ) grown on an InGaN-based light emitting diode (LED) has been performed. The TJ consists of a heavily Ge-doped n-type GaN layer grown by ammonia-based molecular-beam epitaxy on a heavily Mg-doped p-type GaN thin layer, grown by metalorganic vapor phase epitaxy. A correlation of atom probe tomography, electron holography and secondary ion mass spectrometry has been performed in order to investigate the nm-scale distribution of both Mg and Ge at the TJ. Experimental results reveal that Mg segregates at the TJ interface, and diffuses into the Ge-doped layer. As a result, the dopant concentration and distribution differ significantly from the nominal values. Despite this, electron holography reveals a TJ depletion width of ∼7 nm, in agreement with band diagram simulations using the experimentally determined dopant distribution. (paper)