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Journal
Zhurnal Prikladnoj Spektroskopii; ISSN 0514-7506; 
; v. 38(6); p. 1005-1008
; v. 38(6); p. 1005-1008
[en] Impact of anode etching on the CuInSe2 luminescent properties is studied. The photoluminescence spectral dependencies of the CuInSe2 anodic layers photoluminescence at the temperature of T = 300 K are presented. It is established that anodic etching of the CuInSe2 crystals causes formation of wide-range layers, characterized by photoluminescence in the visible spectral range in form of wide bands
Journal
[en] Electrical and luminescent properties of p-type CdSnP2 crystals, doped with copper with hole concentration of p approximately 1014cm-3 and usub(p)=100-120cm2/Vxs are studied. It is marked that one of the 112 platelets is characterized by Nsub(D)>Nsub(A) (donor and acceptor concentrations) and higher photoluminescence intensity than the opposite one with the same indices for which Nsub(A) approximately Nsub(D /(D) and k is approximately 1. Photoluminescence (PL) spectra of the samples doped with copper consists of a broad band (W is approximately 70MeV at 80K) connected with electron transitions at the acceptor level Esub(A)+0.14eV. The polarization degree of the emission in the region of this band can reach 80%, and peculiarities of azimuthal dependence of PL intensity for transitions to the deep acceptor can be connected with Cu spacing in various states
Journal
Ukrainskij Fizicheskij Zhurnal; ISSN 0503-1265; ; v. 23(8); p. 1355-1359
; v. 23(8); p. 1355-1359
[en] Photo-luminescent properties of some biological objects and porous silicon are compared. Green leaves, human skin and nails are used as biological objects. Photoluminescence spectra are measured under the excitation of the objects indicated by He-Cd laser radiation at T = 300 K. It is ascertained, that photoluminescence of green leaves of plants even exceeds the similar parameter for the porous silicon. This can stimulate the efforts of practical application of objects of biological origin in luminescent electronics
Journal
[en] With the use of polarized light the photoconductivity (PC) in the monocrystalline samples of n-AgInS2 in the orthorhombic structures at 300 and 77 K has been measured in the spectral range 0.8-4.0 eV. The anisotropy in the PC spectrum is observed near the fundamental absorption edge. The structures observed are discussed on the basis of the band structure and selection rUles for the optical transitions in the orthorhombic AgInS2 crystals. The lowest band gaps at 300 K in the orthorhombic phases are 1.97 eV. The PC anisotropy is determined by the Dsub(2h)sup(25) symmetry of the orthorhombic lattice and is in agreement With the band structure of this phase. The results obtained indicate the possibilities of the use of AgInS2 crystals as linearly polarized light photoelectric analyzers
Journal
Zhurnal Prikladnoj Spektroskopii; ISSN 0514-7506; ; v. 38(5); p. 814-818
; v. 38(5); p. 814-818
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