[en] A low-temperature (6K) photoluminescence method was used to investigate radiative recombination centers which formation is determined by the presence of noble gas atom (⁴He, ²⁰Ne, ²²Ne, ⁴⁰Ar) in an ion-implanted silicon layer. Two types of such defects are revealed in the luminescence spectra. It is experimentally shown that only one inert atom enters into the first type defects. Annealing of these centers is accompanied with the appearance of the second type complexes representing complex microstructures, the composition of which does not include inert atoms themselves; however the atoms take part into the formation of the microstructures

No abstract available

[en] Lifetime control in power devices is an effective means of their speeding. To reduce the turn-off time of such devices, irradiation with fast electrons may be used. The main advantage of the electron irradiation as a means of lifetime control is the possibility to irradiate the devices after their packaging. Required characteristics of devices can be finally adjusted by varying the dose given to them. An MOS controlled thyristor (MCT) with a blocking voltage of 3000 V was used to demonstrate the possibilities offered by this method. Before irradiation, the turn-off time of the MCT was 30 μs. After irradiating the thyristor with 2 MeV electrons up to the dose 5x10¹² cm^-2, the turn-off time was reduced to 2.5 μs. The on-voltage was increased to 7.5 V at a highest controlled current density of 160 A/cm². The experiments showed that, using electron irradiation, it is possible to control the minority carrier lifetime in the range between 30 and 2 μs with acceptable increase in the on-voltage (from 2.8 to 7.5 V). The most interesting consequences of the above treatment were an increase in the current density which could be controlled by the thyristor (up to 160 A/cm² ) and the possibility of device operation at a total current of 55 A. Thermal stability of the radiation-reduced changes was compared with the case of proton-irradiated MCT crystals

[en] Low-temperature photoluminescence (PL) of silicon irradiated by 1.5 MeV protons and 400 KeV H₂⁺ ions is investigated. At annealing temperatures over 300 deg C a number of new lines appears in PL spectra. New lines connected with hydrogen-containing complexes are discriminated by comparing the spectra of samples irradiated by protons and H₂⁺ with those irradiated by He₂⁺(800 KeV). The range of the annealing temperatures when the lines are observed is determined. The maximum number of lines appears when the annealing temperature reaches 550 deg C. The complete annealing of impurity radiation and restoration of exciton lines caused by doping impurity depend on the type of irradiation and dose and take place in the range of 550 - 700 deg C

No abstract available

No abstract available

No abstract available

[en] Cathodoluminescence spectra of GaAs crystals irradiated by Al⁺ and P⁺ ions have been investigated under different conditions. It has been found that irradiation at the temperature of 350-400 deg C with subsequent annealing (850-900 deg C) or at 500 deg C without annealing allows one to obtain emissive layers of solid solutions. Variation of the exciting electron energy in the range from 4 to 20 keV makes it possible to trace the variation of the luminescence character with depth. As a result, some peculiarities of synthesis of triple compound layers in substituting 3 and 5 group components have been revealed. And namely, in substituting a nonvolatile component of a compound a defective area containing ''excessive'' atoms of the substituted component is formed under a broad-zone layer

No abstract available

[en] For studying the defects distribution in depth used are measurements of intensities of two photoluminescence bands of irradiated gallium arsenide during laminar etching with the rate of 30 +- 8 A/S. Simultaneous measuring of intensities of two bands allows determining profiles of distributions of centres of both radiative and radiationless recombinations. Deep penetration (up to 1 μ m) of defects into gallium arsenide is observed after its irradiation by argon ions at dose of 10¹⁵ cm^-2. One of the types of defects penetrating very deep are gallium vacancies